Carrier activation in Mg implanted GaN by short wavelength Nd:YAG laser thermal annealing
Activation of Mg-implanted GaN has been investigated by the combination of thermal and laser annealing. The laser annealing was carried out using third harmonic generation (λ = 355 nm) of a Nd:YAG laser. Mg ion activation and reduction of implanted-defects after various annealing processes have been...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Published: |
Wiley-VCH Verlag
2017
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/77030/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85026375408&doi=10.1002%2fpssa.201700225&partnerID=40&md5=7daa7a7ec40838bb85ee38fb4efc7021 |
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