Cover Image

Analytical study of drift velocity in low dimensional devices

Understanding of quantum limit in low dimensional devices helps to develop the new device types same as Carbon Nanotube Field Effect Transistor (CNTFET) and Naonowire. For each dimensionality the limitations on carrier drift velocity due to the high-field streaming of otherwise randomly velocity vec...

Full description

Saved in:
Bibliographic Details
Main Authors: Ahmadi, Mohammad Taghi, Saad, Ismail, Riyadi, Munawar Agus, Ismail, Razali, Arora, Vijay K.
Format: Article
Language:English
Published: Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia 2008
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/7662/1/MohammadTAhmadi2008_AnalyticalStudyofDriftVelocity.pdf
http://eprints.utm.my/id/eprint/7662/
http://jfs.ibnusina.utm.my/index.php/jfs/issue/view/22/showToc
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utm.7662
record_format eprints
spelling my.utm.76622017-10-23T04:16:29Z http://eprints.utm.my/id/eprint/7662/ Analytical study of drift velocity in low dimensional devices Ahmadi, Mohammad Taghi Saad, Ismail Riyadi, Munawar Agus Ismail, Razali Arora, Vijay K. QC Physics Understanding of quantum limit in low dimensional devices helps to develop the new device types same as Carbon Nanotube Field Effect Transistor (CNTFET) and Naonowire. For each dimensionality the limitations on carrier drift velocity due to the high-field streaming of otherwise randomly velocity vector in equilibrium is reported. The results are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The ultimate drift velocity for all dimensions is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the ultimate drift velocity is the Fermi velocity for degenerately doped silicon increasing with carrier concentration but independent of the temperature Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia 2008 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/7662/1/MohammadTAhmadi2008_AnalyticalStudyofDriftVelocity.pdf Ahmadi, Mohammad Taghi and Saad, Ismail and Riyadi, Munawar Agus and Ismail, Razali and Arora, Vijay K. (2008) Analytical study of drift velocity in low dimensional devices. Journal of Fundamental Sciences, 4 (2). pp. 403-413. ISSN 1823-626X http://jfs.ibnusina.utm.my/index.php/jfs/issue/view/22/showToc
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic QC Physics
spellingShingle QC Physics
Ahmadi, Mohammad Taghi
Saad, Ismail
Riyadi, Munawar Agus
Ismail, Razali
Arora, Vijay K.
Analytical study of drift velocity in low dimensional devices
description Understanding of quantum limit in low dimensional devices helps to develop the new device types same as Carbon Nanotube Field Effect Transistor (CNTFET) and Naonowire. For each dimensionality the limitations on carrier drift velocity due to the high-field streaming of otherwise randomly velocity vector in equilibrium is reported. The results are based on the asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field. The ultimate drift velocity for all dimensions is found to be appropriate thermal velocity for a nondegenerately doped sample of silicon, increasing with the temperature, but independent of carrier concentration. However, the ultimate drift velocity is the Fermi velocity for degenerately doped silicon increasing with carrier concentration but independent of the temperature
format Article
author Ahmadi, Mohammad Taghi
Saad, Ismail
Riyadi, Munawar Agus
Ismail, Razali
Arora, Vijay K.
author_facet Ahmadi, Mohammad Taghi
Saad, Ismail
Riyadi, Munawar Agus
Ismail, Razali
Arora, Vijay K.
author_sort Ahmadi, Mohammad Taghi
title Analytical study of drift velocity in low dimensional devices
title_short Analytical study of drift velocity in low dimensional devices
title_full Analytical study of drift velocity in low dimensional devices
title_fullStr Analytical study of drift velocity in low dimensional devices
title_full_unstemmed Analytical study of drift velocity in low dimensional devices
title_sort analytical study of drift velocity in low dimensional devices
publisher Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia
publishDate 2008
url http://eprints.utm.my/id/eprint/7662/1/MohammadTAhmadi2008_AnalyticalStudyofDriftVelocity.pdf
http://eprints.utm.my/id/eprint/7662/
http://jfs.ibnusina.utm.my/index.php/jfs/issue/view/22/showToc
_version_ 1643644824043126784
score 13.211869

Similar Items