Efficient visible photoluminescence from self-assembled ge QDs embedded in silica matrix
Measuring the growth parameters of Ge quantum dots (QDs) embedded in SiO2/Si hetero-structure is prerequisite for developing the optoelectronic devices such as photovoltaics and sensors. Their optical properties can be tuned by tailoring the growth morphology and structures, where the growth paramet...
Saved in:
Main Authors: | Samavati, A., Samavati, Z., Ismail, A. F., Othman, M. H. D., Rahman, M. A., Zulhairun, A. K. |
---|---|
Format: | Article |
Published: |
Institute of Physics Publishing
2017
|
Subjects: | |
Online Access: | http://eprints.utm.my/id/eprint/75923/ https://www.scopus.com/inward/record.uri?eid=2-s2.0-85020775287&doi=10.1088%2f0256-307X%2f34%2f6%2f068102&partnerID=40&md5=0da9e54d5ff05e3cbc508ebb276799e4 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
The influence of growth temperature on structural and optical properties of sputtered ZnO QDs embedded in SiO2 matrix
by: Samavati, Alireza, et al.
Published: (2015) -
Self-assembled Ge/Si nanoislands: effect of argon flow and radio frequency power
by: Othaman, Zulkafli, et al.
Published: (2014) -
Photoluminescence studies of silicon self-assembled quantum dots
by: Sakrani, Samsudi, et al.
Published: (2012) -
Defect characteristic of oxygen-deficient Ge-doped preform using photoluminescence spectroscopy
by: Siti Shafiqah, A.S., et al.
Published: (2023) -
The development of BEEM modeling for the characterization of Si/Ge self-assembled quantum dot heterostructures
by: Hutagalung, Sabar D., et al.
Published: (2006)