Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic
Tin Copper antimony sulfide (CuSbS2) thin films have been deposited by combinatorial thermal evaporation technique. The as-deposited films were annealed at different temperature in the inert atmosphere. The obtained samples were then annealed at temperatures (150-350 ᵒC) in argon gas atmosphere for...
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Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia
2016
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my.utm.667132017-11-22T00:45:07Z http://eprints.utm.my/id/eprint/66713/ Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic Hussain, Arshad Ahmed, Rashid Ali, N. Shaari, Amiruddin Wan Shamsuri, Wan Nurulhuda Q Science Tin Copper antimony sulfide (CuSbS2) thin films have been deposited by combinatorial thermal evaporation technique. The as-deposited films were annealed at different temperature in the inert atmosphere. The obtained samples were then annealed at temperatures (150-350 ᵒC) in argon gas atmosphere for 60 min. The annealing effect on the structural, morphological and optical properties has been investigated using different characterization techniques. XRD, transmittance and electrical properties were calculated and found to lie in the range of absorbing layers. The calculated optical band gap energy was about 1.55eV. Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia 2016-01-01 Article PeerReviewed Hussain, Arshad and Ahmed, Rashid and Ali, N. and Shaari, Amiruddin and Wan Shamsuri, Wan Nurulhuda (2016) Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic. Journal of Solid State Science and Technology Letters, 17 (1). pp. 12-18. ISSN 0128-8393 http://letters.masshp.net/vol-17-no-1-2-2016/ |
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Q Science Hussain, Arshad Ahmed, Rashid Ali, N. Shaari, Amiruddin Wan Shamsuri, Wan Nurulhuda Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
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Tin Copper antimony sulfide (CuSbS2) thin films have been deposited by combinatorial thermal evaporation technique. The as-deposited films were annealed at different temperature in the inert atmosphere. The obtained samples were then annealed at temperatures (150-350 ᵒC) in argon gas atmosphere for 60 min. The annealing effect on the structural, morphological and optical properties has been investigated using different characterization techniques. XRD, transmittance and electrical properties were calculated and found to lie in the range of absorbing layers. The calculated optical band gap energy was about 1.55eV. |
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Article |
author |
Hussain, Arshad Ahmed, Rashid Ali, N. Shaari, Amiruddin Wan Shamsuri, Wan Nurulhuda |
author_facet |
Hussain, Arshad Ahmed, Rashid Ali, N. Shaari, Amiruddin Wan Shamsuri, Wan Nurulhuda |
author_sort |
Hussain, Arshad |
title |
Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
title_short |
Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
title_full |
Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
title_fullStr |
Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
title_full_unstemmed |
Sb-rich CuSbS2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
title_sort |
sb-rich cusbs2 thin films deposited by combinatorial thermal evaporation for photovoltaic |
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Persatuan Sains dan Teknologi Keadaan Pepejal Malaysia |
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2016 |
url |
http://eprints.utm.my/id/eprint/66713/ http://letters.masshp.net/vol-17-no-1-2-2016/ |
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1643655841374535680 |
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13.211869 |