The electronic and transport properties of defective bilayer graphene nanoribbon
This paper reports the atomistic simulation of AA and AB stacking bilayer graphene nanoribbon (BGNR) incorporated vacancy defect. The vacancy defects include single vacancy (SV), stone wales (SW), divacancy (DV) and 57775 located in BGNR layers. Through simulation, it is demonstrated the SW defect l...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
American Scientific Publishers
2017
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/66278/ https://doi.org/10.1166/jno.2017.1981 |
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