The design and characterization of breakdown mechanism on p+/n- well single photon Avalanche Diode (Spad)
In this paper, the breakdown voltage (VBD) and dark current (ID) of p+/n-well avalanche photodiodes operating in Geiger is reported. Simulations are performed by implemented the numerical simulations at the technological process and electrical level by using two dimensional TCAD simulations. The sim...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/63562/ http://www.akademiabaru.com/doc/ARAMV13_N1_P12_23.pdf |
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