Staff View: III-V semiconductor nanowire for solid oxide fuel cells

III-V semiconductor nanowire for solid oxide fuel cells

Solid oxide fuel cells (SOFC) have much promise as efficient devices for the direct conversion of the energy stored in chemical fuels into electricity. The development of highly robust SOFC that can operate on a range of fuels, however, requires improvement in the electrodes, especially the anode, w...

Full description

Saved in:

Bibliographic Details
Main Authors:	Muhammad, R., Wahab, Y., Othaman, Z., Sakrania, S., Ibrahim, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC Physics
Online Access:	http://eprints.utm.my/id/eprint/62126/1/RosnitaMuhammad2015_III-VSemiconductorNanowireforSolidOxide.pdf http://eprints.utm.my/id/eprint/62126/ http://news.utm.my/2015/09/5th-international-conference-on-fuel-cell-and-hydrogen-technology/
Tags:	Add Tag No Tags, Be the first to tag this record!

id	my.utm.62126
record_format	eprints
spelling	my.utm.621262017-05-30T00:42:42Z http://eprints.utm.my/id/eprint/62126/ III-V semiconductor nanowire for solid oxide fuel cells Muhammad, R. Wahab, Y. Othaman, Z. Sakrania, S. Ibrahim, Z. QC Physics Solid oxide fuel cells (SOFC) have much promise as efficient devices for the direct conversion of the energy stored in chemical fuels into electricity. The development of highly robust SOFC that can operate on a range of fuels, however, requires improvement in the electrodes, especially the anode, where nanoscale engineering of the structure is required in order to maximize the number of sites where the electrochemical reactions take place. In this article, we briefly explained the growth of III-V semiconductor nanowire layer on GaAs substrate as an anode electrodes using metal organic chemical organic vapor deposition (MOCVD). Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the structural properties and current-voltage changes in the wires. Results show that the III-V nanowires grow with less defect structure, uniform in composition and diameters with optimal growth parameters. The current-voltage measurement showed similar to that of a p-n junction characteristic which is suitable in the SOFC application. 2015 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/62126/1/RosnitaMuhammad2015_III-VSemiconductorNanowireforSolidOxide.pdf Muhammad, R. and Wahab, Y. and Othaman, Z. and Sakrania, S. and Ibrahim, Z. (2015) III-V semiconductor nanowire for solid oxide fuel cells. In: International Conference on Fuel Cell and Hydrogen Technology 2015 (ICFCHT 2015), 1-3 Sept, 2015, Kuala Lumpur, Malaysia. http://news.utm.my/2015/09/5th-international-conference-on-fuel-cell-and-hydrogen-technology/
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
language	English
topic	QC Physics
spellingShingle	QC Physics Muhammad, R. Wahab, Y. Othaman, Z. Sakrania, S. Ibrahim, Z. III-V semiconductor nanowire for solid oxide fuel cells
description	Solid oxide fuel cells (SOFC) have much promise as efficient devices for the direct conversion of the energy stored in chemical fuels into electricity. The development of highly robust SOFC that can operate on a range of fuels, however, requires improvement in the electrodes, especially the anode, where nanoscale engineering of the structure is required in order to maximize the number of sites where the electrochemical reactions take place. In this article, we briefly explained the growth of III-V semiconductor nanowire layer on GaAs substrate as an anode electrodes using metal organic chemical organic vapor deposition (MOCVD). Field-emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM) and conductivity atomic force microscopy (CAFM) analysis were carried out to investigate the structural properties and current-voltage changes in the wires. Results show that the III-V nanowires grow with less defect structure, uniform in composition and diameters with optimal growth parameters. The current-voltage measurement showed similar to that of a p-n junction characteristic which is suitable in the SOFC application.
format	Conference or Workshop Item
author	Muhammad, R. Wahab, Y. Othaman, Z. Sakrania, S. Ibrahim, Z.
author_facet	Muhammad, R. Wahab, Y. Othaman, Z. Sakrania, S. Ibrahim, Z.
author_sort	Muhammad, R.
title	III-V semiconductor nanowire for solid oxide fuel cells
title_short	III-V semiconductor nanowire for solid oxide fuel cells
title_full	III-V semiconductor nanowire for solid oxide fuel cells
title_fullStr	III-V semiconductor nanowire for solid oxide fuel cells
title_full_unstemmed	III-V semiconductor nanowire for solid oxide fuel cells
title_sort	iii-v semiconductor nanowire for solid oxide fuel cells
publishDate	2015
url	http://eprints.utm.my/id/eprint/62126/1/RosnitaMuhammad2015_III-VSemiconductorNanowireforSolidOxide.pdf http://eprints.utm.my/id/eprint/62126/ http://news.utm.my/2015/09/5th-international-conference-on-fuel-cell-and-hydrogen-technology/
_version_	1643655329906425856
score	13.211869

III-V semiconductor nanowire for solid oxide fuel cells

Similar Items