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Carrier scattering and impact ionization in bilayer graphene

Transport properties of carriers in bilayer graphene (BLG) were studied. Several analytical models were developed for drift velocity, scattering rate and ionization coefficient of BLG for the first time. Then, the joint effect of temperature and potential difference of layers were addressed on the m...

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Main Authors: Saeidmanesh, Mehdi, Ghadiry, Mahdiar Hossein, Khaledian, Mohsen, Kiani, Mohammad Javad, Ismail, Razali
Format: Article
Published: Springer Science+Business Media New York 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/52060/
http://dx.doi.org/10.1007/s10825-013-0497-0
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spelling my.utm.520602018-11-30T07:00:35Z http://eprints.utm.my/id/eprint/52060/ Carrier scattering and impact ionization in bilayer graphene Saeidmanesh, Mehdi Ghadiry, Mahdiar Hossein Khaledian, Mohsen Kiani, Mohammad Javad Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering Transport properties of carriers in bilayer graphene (BLG) were studied. Several analytical models were developed for drift velocity, scattering rate and ionization coefficient of BLG for the first time. Then, the joint effect of temperature and potential difference of layers were addressed on the modeled parameters. The accuracy of the proposed models for drift velocity and scattering rate was verified by the simulation results of published works. In addition, the analytical results of ionization coefficient of BLG were compared with those of silicon. Springer Science+Business Media New York 2014 Article PeerReviewed Saeidmanesh, Mehdi and Ghadiry, Mahdiar Hossein and Khaledian, Mohsen and Kiani, Mohammad Javad and Ismail, Razali (2014) Carrier scattering and impact ionization in bilayer graphene. Journal of Computational Electronics, 13 (1). pp. 180-185. ISSN 1569-8025 http://dx.doi.org/10.1007/s10825-013-0497-0 DOI: 10.1007/s10825-013-0497-0
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Saeidmanesh, Mehdi
Ghadiry, Mahdiar Hossein
Khaledian, Mohsen
Kiani, Mohammad Javad
Ismail, Razali
Carrier scattering and impact ionization in bilayer graphene
description Transport properties of carriers in bilayer graphene (BLG) were studied. Several analytical models were developed for drift velocity, scattering rate and ionization coefficient of BLG for the first time. Then, the joint effect of temperature and potential difference of layers were addressed on the modeled parameters. The accuracy of the proposed models for drift velocity and scattering rate was verified by the simulation results of published works. In addition, the analytical results of ionization coefficient of BLG were compared with those of silicon.
format Article
author Saeidmanesh, Mehdi
Ghadiry, Mahdiar Hossein
Khaledian, Mohsen
Kiani, Mohammad Javad
Ismail, Razali
author_facet Saeidmanesh, Mehdi
Ghadiry, Mahdiar Hossein
Khaledian, Mohsen
Kiani, Mohammad Javad
Ismail, Razali
author_sort Saeidmanesh, Mehdi
title Carrier scattering and impact ionization in bilayer graphene
title_short Carrier scattering and impact ionization in bilayer graphene
title_full Carrier scattering and impact ionization in bilayer graphene
title_fullStr Carrier scattering and impact ionization in bilayer graphene
title_full_unstemmed Carrier scattering and impact ionization in bilayer graphene
title_sort carrier scattering and impact ionization in bilayer graphene
publisher Springer Science+Business Media New York
publishDate 2014
url http://eprints.utm.my/id/eprint/52060/
http://dx.doi.org/10.1007/s10825-013-0497-0
_version_ 1643653141163409408
score 13.244745

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