Behavior of defects in a-plane GaN films grown by low-angle-incidence microchannel epitaxy (LAIMCE)
The microstructure in a-plane GaN thin films was characterized by transmission electron microscopy. The GaN thin films were grown by metal-organic molecular beam epitaxy (MOMBE) on a GaN/r-plane sapphire template using the low-angle-incidence microchannel epitaxy (LAIMCE) technique, following fabric...
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| Main Authors: | , , , , , , , |
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| Format: | Article |
| Published: |
Elsevier B.V.
2014
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/51987/ http://dx.doi.org/10.1016/j.jcrysgro.2013.11.032 |
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