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An analysis of the electron trajectory in the vicinity of GaAs quantum dot

Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To pe...

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Main Authors: Kasmin, Mohd. Khalid, Ithnin, Hanafi, Ahmed, Rashid, Shaari, Amiruddin
Format: Article
Published: Universiti Kebangsaan Malaysia 2014
Subjects:
Q Science
Online Access:http://eprints.utm.my/id/eprint/51766/
http://www.ukm.my/jsm
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spelling my.utm.517662018-10-23T02:04:52Z http://eprints.utm.my/id/eprint/51766/ An analysis of the electron trajectory in the vicinity of GaAs quantum dot Kasmin, Mohd. Khalid Ithnin, Hanafi Ahmed, Rashid Shaari, Amiruddin Q Science Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface Universiti Kebangsaan Malaysia 2014 Article PeerReviewed Kasmin, Mohd. Khalid and Ithnin, Hanafi and Ahmed, Rashid and Shaari, Amiruddin (2014) An analysis of the electron trajectory in the vicinity of GaAs quantum dot. Sains Malaysiana, 43 (6). pp. 819-825. ISSN 0126-6039 http://www.ukm.my/jsm
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic Q Science
spellingShingle Q Science
Kasmin, Mohd. Khalid
Ithnin, Hanafi
Ahmed, Rashid
Shaari, Amiruddin
An analysis of the electron trajectory in the vicinity of GaAs quantum dot
description Quantum dots being an interesting class of nanostructures are considered potential prototype systems for novel nano-devices such as single electron transistor (SET). Here in this research, we present an analysis of the electron trajectory in the vicinity of gallium arsenide (GaAs) quantum dot. To perform this study, DFT based methodology is employed to optimize structure of quantum dot and determining the electrostatic potential around the dot. Under the influence of obtained electrostatic potential, trajectory of the moving electron towards the dot is investigated. The results showed that GaAs quantum dot have negative and positive potential surfaces that influence the electron interaction with the dot. These results motivate the development of SET electrode channel where the electron moves towards the dot on the surface with positive potential rather than negative potential surface
format Article
author Kasmin, Mohd. Khalid
Ithnin, Hanafi
Ahmed, Rashid
Shaari, Amiruddin
author_facet Kasmin, Mohd. Khalid
Ithnin, Hanafi
Ahmed, Rashid
Shaari, Amiruddin
author_sort Kasmin, Mohd. Khalid
title An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_short An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_full An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_fullStr An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_full_unstemmed An analysis of the electron trajectory in the vicinity of GaAs quantum dot
title_sort analysis of the electron trajectory in the vicinity of gaas quantum dot
publisher Universiti Kebangsaan Malaysia
publishDate 2014
url http://eprints.utm.my/id/eprint/51766/
http://www.ukm.my/jsm
_version_ 1643653066371629056
score 13.211869

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