Carrier concentration modeling of bilayer graphene
In this paper, the carrier concentration for bilayer graphene is modelled. The effect of an applied interlayer voltage V on the bandgap and carrier concentration is analysed using a new analytical approach. We begin by modelling of the density of states followed by carrier concentration as a functio...
保存先:
| 主要な著者: | , , , , , , |
|---|---|
| フォーマット: | 論文 |
| 出版事項: |
2012
|
| 主題: | |
| オンライン･アクセス: | http://eprints.utm.my/id/eprint/46669/ http://dx.doi.org/10.1063/1.4769002 |
| タグ: |
タグ追加
タグなし, このレコードへの初めてのタグを付けませんか!
|
| 要約: | In this paper, the carrier concentration for bilayer graphene is modelled. The effect of an applied interlayer voltage V on the bandgap and carrier concentration is analysed using a new analytical approach. We begin by modelling of the density of states followed by carrier concentration as a function of V. It is found that as V increases, carrier concentration and the bandgap also increase. |
|---|