Light emission from nanoporous silicon and germanium quantum wires

A model calculation has been carried out to investigate the room temperature luminescence intensity as a function of the size and the voltage of silicon (Si) and germanium (Ge) nanowires (NWs) having 10 to 40 atoms per wire with diameter ranging from 1.5 nm to 4.0 nm. The effects of exciton energy s...

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Main Authors: Ghoshal, S. K., Sahar, M. R., Rohani, M. S.
Format: Article
Published: Spectral-Force Publications 2011
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Online Access:http://eprints.utm.my/id/eprint/45018/
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spelling my.utm.450182017-09-28T02:54:09Z http://eprints.utm.my/id/eprint/45018/ Light emission from nanoporous silicon and germanium quantum wires Ghoshal, S. K. Sahar, M. R. Rohani, M. S. QD Chemistry A model calculation has been carried out to investigate the room temperature luminescence intensity as a function of the size and the voltage of silicon (Si) and germanium (Ge) nanowires (NWs) having 10 to 40 atoms per wire with diameter ranging from 1.5 nm to 4.0 nm. The effects of exciton energy states, localized surface states and the quantum confinement are integrated in our phenomenological model to derive an analytical expression for the photoluminescence (PL) and electroluminescence (EL) intensity. It can explain very accurately the experimental PL and EL data and provide the mechanism for them. The model is quite general, applicable to quantum well and dots to study temperature dependent luminescence and current density. By controlling a set of fitting parameters in the model, one can tune the EL and PL peak and intensity. Our results show that both quantum confinement and surface passivation in addition to exciton effects determine the optical and electronic properties of Si and Ge NWs. We observed that the EL and PL intensities occurs at the same energy, however the EL intensity has sharp Gaussian sub peaks and red shifted compared to the PL intensity. Spectral-Force Publications 2011 Article PeerReviewed Ghoshal, S. K. and Sahar, M. R. and Rohani, M. S. (2011) Light emission from nanoporous silicon and germanium quantum wires. Asian Journal of Spectroscopy, 15 (1). pp. 1-9. ISSN 0971-9237
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QD Chemistry
spellingShingle QD Chemistry
Ghoshal, S. K.
Sahar, M. R.
Rohani, M. S.
Light emission from nanoporous silicon and germanium quantum wires
description A model calculation has been carried out to investigate the room temperature luminescence intensity as a function of the size and the voltage of silicon (Si) and germanium (Ge) nanowires (NWs) having 10 to 40 atoms per wire with diameter ranging from 1.5 nm to 4.0 nm. The effects of exciton energy states, localized surface states and the quantum confinement are integrated in our phenomenological model to derive an analytical expression for the photoluminescence (PL) and electroluminescence (EL) intensity. It can explain very accurately the experimental PL and EL data and provide the mechanism for them. The model is quite general, applicable to quantum well and dots to study temperature dependent luminescence and current density. By controlling a set of fitting parameters in the model, one can tune the EL and PL peak and intensity. Our results show that both quantum confinement and surface passivation in addition to exciton effects determine the optical and electronic properties of Si and Ge NWs. We observed that the EL and PL intensities occurs at the same energy, however the EL intensity has sharp Gaussian sub peaks and red shifted compared to the PL intensity.
format Article
author Ghoshal, S. K.
Sahar, M. R.
Rohani, M. S.
author_facet Ghoshal, S. K.
Sahar, M. R.
Rohani, M. S.
author_sort Ghoshal, S. K.
title Light emission from nanoporous silicon and germanium quantum wires
title_short Light emission from nanoporous silicon and germanium quantum wires
title_full Light emission from nanoporous silicon and germanium quantum wires
title_fullStr Light emission from nanoporous silicon and germanium quantum wires
title_full_unstemmed Light emission from nanoporous silicon and germanium quantum wires
title_sort light emission from nanoporous silicon and germanium quantum wires
publisher Spectral-Force Publications
publishDate 2011
url http://eprints.utm.my/id/eprint/45018/
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score 13.211869