Formation and characterization of silicon self-assembled nanodots
One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy sta...
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| Main Authors: | , , |
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| Format: | Article |
| Published: |
Institute of Electrical and Electronics Engineers
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/44932/ |
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| Summary: | One of the most important fields in semiconductor physics is study the nanostructure of materials with dimensions less than 2-like quantum dots —QD. Si quantum dot is one of typical material used in nanostructure, because of their unique and useful functions caused from quantized electron energy state. Although various formation techniques have been developed so far to achieve high-density and nanometer-size. In general silicon QDs can be formed on non-crystalline substrates, such as glass. Si quantum dots have been successfully grown on corning glass (7059) substrate. This nucleation starts to appear at first 7 min of QDs growth formation until stable conditions of the dots. The measurement results estimated average dots size to be 53 nm is confirmed by using AFM. |
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