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Characterization of 0.5 at % nd doped YVO4 pumped by diode laser

The output of diode laser pumped 0.5 at % Nd doped vanadate YVO4 crystal bar was characterized. Diode laser has wavelength centered at 808 nm. The pump power was focused to localize the high power density of source at the crystal bar surface. The output of diode pumped vanadate crystal was detected...

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Main Authors: Bidin, Noriah, Krishnan, Ganesan
Format: Article
Published: AIP Publishing LLC 2011
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/44780/
http://dx.doi.org/10.1063/1.3587000
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spelling my.utm.447802022-01-31T07:08:22Z http://eprints.utm.my/id/eprint/44780/ Characterization of 0.5 at % nd doped YVO4 pumped by diode laser Bidin, Noriah Krishnan, Ganesan QC Physics The output of diode laser pumped 0.5 at % Nd doped vanadate YVO4 crystal bar was characterized. Diode laser has wavelength centered at 808 nm. The pump power was focused to localize the high power density of source at the crystal bar surface. The output of diode pumped vanadate crystal was detected by a spectrum analyzer. The output radiation is centered at 1064 nm with linewidth of 1.15 nm. The stimulated emission cross section was estimated to be 14.94×10-19cm2. The intensity of the fluorescent beam was measured by powermeter and permanently recorded by using CCD video camera. The beam spot is TEMoo mode with beam divergence of 0.4°with the absent of intracavity. The optical -to-optical slope efficiency is found to be as 4.8% with threshold power of 1404 mW. AIP Publishing LLC 2011 Article PeerReviewed Bidin, Noriah and Krishnan, Ganesan (2011) Characterization of 0.5 at % nd doped YVO4 pumped by diode laser. AIP Conference Proceedings, 1341 (1). pp. 272-274. ISSN 0094-243X http://dx.doi.org/10.1063/1.3587000 DOI:10.1063/1.3587000
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Bidin, Noriah
Krishnan, Ganesan
Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
description The output of diode laser pumped 0.5 at % Nd doped vanadate YVO4 crystal bar was characterized. Diode laser has wavelength centered at 808 nm. The pump power was focused to localize the high power density of source at the crystal bar surface. The output of diode pumped vanadate crystal was detected by a spectrum analyzer. The output radiation is centered at 1064 nm with linewidth of 1.15 nm. The stimulated emission cross section was estimated to be 14.94×10-19cm2. The intensity of the fluorescent beam was measured by powermeter and permanently recorded by using CCD video camera. The beam spot is TEMoo mode with beam divergence of 0.4°with the absent of intracavity. The optical -to-optical slope efficiency is found to be as 4.8% with threshold power of 1404 mW.
format Article
author Bidin, Noriah
Krishnan, Ganesan
author_facet Bidin, Noriah
Krishnan, Ganesan
author_sort Bidin, Noriah
title Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
title_short Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
title_full Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
title_fullStr Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
title_full_unstemmed Characterization of 0.5 at % nd doped YVO4 pumped by diode laser
title_sort characterization of 0.5 at % nd doped yvo4 pumped by diode laser
publisher AIP Publishing LLC
publishDate 2011
url http://eprints.utm.my/id/eprint/44780/
http://dx.doi.org/10.1063/1.3587000
_version_ 1724073268496826368
score 13.211869

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