Carbon thin films deposition by KRF pulsed laser at different temperatures
The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done by Atomic Force Microscope (AFM). The 10,000 pulses of KrF Excimer laser of wavelength 248 nm, pulse energy 13-50 mJ and pulse width 20 ns was focused at an angle of 45° to ablate pure graphite target...
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my.utm.447702017-09-12T08:37:53Z http://eprints.utm.my/id/eprint/44770/ Carbon thin films deposition by KRF pulsed laser at different temperatures Qindeel, Rabia Ali, Jalil Hussain, M. S. Chaudhary, K. T. TP Chemical technology The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done by Atomic Force Microscope (AFM). The 10,000 pulses of KrF Excimer laser of wavelength 248 nm, pulse energy 13-50 mJ and pulse width 20 ns was focused at an angle of 45° to ablate pure graphite target. Silicon (111) was used as a substrate to deposit carbon thin film and placed at distance of 15 mm from the target surface. The whole experiment has been performed under vacuum ~ 10-4 Torr in stainless steel vacuum chamber. The nature of bonding of carbon thin films deposited at different temperatures has been done by using technique Fourier Infrared Transformation Spectroscopy (FTIR). Results obtained from AFM and FTIR support each other and explain the effect of substrate temperature on thin films deposition. Institute of Electrical and Electronics Engineers 2011 Article PeerReviewed Qindeel, Rabia and Ali, Jalil and Hussain, M. S. and Chaudhary, K. T. (2011) Carbon thin films deposition by KRF pulsed laser at different temperatures. Enabling Science and Nanotechnology, 1341 . pp. 199-204. ISSN 0929-6212 |
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TP Chemical technology Qindeel, Rabia Ali, Jalil Hussain, M. S. Chaudhary, K. T. Carbon thin films deposition by KRF pulsed laser at different temperatures |
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The surface morphology of carbon thin films deposited at temperatures 20°C and 300°C have been done by Atomic Force Microscope (AFM). The 10,000 pulses of KrF Excimer laser of wavelength 248 nm, pulse energy 13-50 mJ and pulse width 20 ns was focused at an angle of 45° to ablate pure graphite target. Silicon (111) was used as a substrate to deposit carbon thin film and placed at distance of 15 mm from the target surface. The whole experiment has been performed under vacuum ~ 10-4 Torr in stainless steel vacuum chamber. The nature of bonding of carbon thin films deposited at different temperatures has been done by using technique Fourier Infrared Transformation Spectroscopy (FTIR). Results obtained from AFM and FTIR support each other and explain the effect of substrate temperature on thin films deposition. |
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Article |
author |
Qindeel, Rabia Ali, Jalil Hussain, M. S. Chaudhary, K. T. |
author_facet |
Qindeel, Rabia Ali, Jalil Hussain, M. S. Chaudhary, K. T. |
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Qindeel, Rabia |
title |
Carbon thin films deposition by KRF pulsed laser at different temperatures |
title_short |
Carbon thin films deposition by KRF pulsed laser at different temperatures |
title_full |
Carbon thin films deposition by KRF pulsed laser at different temperatures |
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Carbon thin films deposition by KRF pulsed laser at different temperatures |
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Carbon thin films deposition by KRF pulsed laser at different temperatures |
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carbon thin films deposition by krf pulsed laser at different temperatures |
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Institute of Electrical and Electronics Engineers |
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2011 |
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http://eprints.utm.my/id/eprint/44770/ |
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