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Mechanism-based reliability model for electronic packages

Mechanism-based reliability model is different from the conventional reliability model. It is generated based on a specific failure. The failure mechanism is studied in detail to obtain a model that incorporates all significant stressing variables. For fatigue driven failure, Coffin-Manson equation...

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Main Author: Ng, Chee Weng
Format: Thesis
Language:English
Published: 2005
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://eprints.utm.my/id/eprint/4369/1/NgCheeWengMFKM2005.pdf
http://eprints.utm.my/id/eprint/4369/
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spelling my.utm.43692018-01-28T02:56:34Z http://eprints.utm.my/id/eprint/4369/ Mechanism-based reliability model for electronic packages Ng, Chee Weng TJ Mechanical engineering and machinery Mechanism-based reliability model is different from the conventional reliability model. It is generated based on a specific failure. The failure mechanism is studied in detail to obtain a model that incorporates all significant stressing variables. For fatigue driven failure, Coffin-Manson equation is the typical and most favourable model due to its simplicity. However, important variables in thermal cycling which are dwell time and ramp rate are not considered in this model. Studies were carried out to investigate the effects of dwell time and ramp rate on the reliability of electronic packages based on Bump Limiting Metallurgy (BLM) separation failure criterion. The experimental results showed that dwell time and ramp rate significantly affected the reliability performance of the BLM structure in the electronic package. The effect of ramp rate was converted into a newly introduced variable, called effective dwell time, (tdwell)eff. Earlier failure of the BLM was observed with the increase of the (tdwell)eff and temperature change, ∆T. Silicon die side wall delamination (SWD) failure was studied to check the applicability of the same approach used in BLM reliability analysis to other fatigue driven failure in electronic package. The studies showed that the same approach was applicable in reliability modelling based on SWD failure. The increase of ∆T, dwell time and ramp rate could accelerate SWD failure. 2005-07 Thesis NonPeerReviewed application/pdf en http://eprints.utm.my/id/eprint/4369/1/NgCheeWengMFKM2005.pdf Ng, Chee Weng (2005) Mechanism-based reliability model for electronic packages. Masters thesis, Universiti Teknologi Malaysia, Faculty of Mechanical Engineering.
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
Ng, Chee Weng
Mechanism-based reliability model for electronic packages
description Mechanism-based reliability model is different from the conventional reliability model. It is generated based on a specific failure. The failure mechanism is studied in detail to obtain a model that incorporates all significant stressing variables. For fatigue driven failure, Coffin-Manson equation is the typical and most favourable model due to its simplicity. However, important variables in thermal cycling which are dwell time and ramp rate are not considered in this model. Studies were carried out to investigate the effects of dwell time and ramp rate on the reliability of electronic packages based on Bump Limiting Metallurgy (BLM) separation failure criterion. The experimental results showed that dwell time and ramp rate significantly affected the reliability performance of the BLM structure in the electronic package. The effect of ramp rate was converted into a newly introduced variable, called effective dwell time, (tdwell)eff. Earlier failure of the BLM was observed with the increase of the (tdwell)eff and temperature change, ∆T. Silicon die side wall delamination (SWD) failure was studied to check the applicability of the same approach used in BLM reliability analysis to other fatigue driven failure in electronic package. The studies showed that the same approach was applicable in reliability modelling based on SWD failure. The increase of ∆T, dwell time and ramp rate could accelerate SWD failure.
format Thesis
author Ng, Chee Weng
author_facet Ng, Chee Weng
author_sort Ng, Chee Weng
title Mechanism-based reliability model for electronic packages
title_short Mechanism-based reliability model for electronic packages
title_full Mechanism-based reliability model for electronic packages
title_fullStr Mechanism-based reliability model for electronic packages
title_full_unstemmed Mechanism-based reliability model for electronic packages
title_sort mechanism-based reliability model for electronic packages
publishDate 2005
url http://eprints.utm.my/id/eprint/4369/1/NgCheeWengMFKM2005.pdf
http://eprints.utm.my/id/eprint/4369/
_version_ 1643644037169676288
score 13.211869

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