Cover Image

Modeling and simulation of single-electron transistors

Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the...

Full description

Saved in:
Bibliographic Details
Main Authors: Lee, Jia Yen, Mat Isa, Ahmad Radzi, Ahmad Dasuki, Karsono
Format: Article
Language:English
Published: Ibnu Sina Institute for Fundamental Science Studies 2005
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/434/1/jfs001006.pdf
http://eprints.utm.my/id/eprint/434/
http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.595.519
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utm.434
record_format eprints
spelling my.utm.4342017-03-06T04:16:35Z http://eprints.utm.my/id/eprint/434/ Modeling and simulation of single-electron transistors Lee, Jia Yen Mat Isa, Ahmad Radzi Ahmad Dasuki, Karsono QC Physics Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits. Ibnu Sina Institute for Fundamental Science Studies 2005-12 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/434/1/jfs001006.pdf Lee, Jia Yen and Mat Isa, Ahmad Radzi and Ahmad Dasuki, Karsono (2005) Modeling and simulation of single-electron transistors. Journal of Fundamental Sciences, 1 . pp. 1-6. ISSN 1823-626X http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.595.519
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic QC Physics
spellingShingle QC Physics
Lee, Jia Yen
Mat Isa, Ahmad Radzi
Ahmad Dasuki, Karsono
Modeling and simulation of single-electron transistors
description Single-electron transistor (SET) can offer lower power consumption and faster operating speed in the era of nanotechnology. It operates in single electronics regime where only one electron can tunnel from source to drain via island. Thus single electron tunneling is the phenomena that describe the principle of SET. Owing to the stochastic nature of the tunneling event, a tunneling electron is considered as a discrete charge. To simulate the SET, Monte Carlo method is used due to its reasonable accuracy in the single electronics simulation. A model is described and used to study the electronic properties of SET. Monte Carlo method follows the tunneling path of a representative number of electrons and it can gives a clear picture of the inner work of the single electron circuits.
format Article
author Lee, Jia Yen
Mat Isa, Ahmad Radzi
Ahmad Dasuki, Karsono
author_facet Lee, Jia Yen
Mat Isa, Ahmad Radzi
Ahmad Dasuki, Karsono
author_sort Lee, Jia Yen
title Modeling and simulation of single-electron transistors
title_short Modeling and simulation of single-electron transistors
title_full Modeling and simulation of single-electron transistors
title_fullStr Modeling and simulation of single-electron transistors
title_full_unstemmed Modeling and simulation of single-electron transistors
title_sort modeling and simulation of single-electron transistors
publisher Ibnu Sina Institute for Fundamental Science Studies
publishDate 2005
url http://eprints.utm.my/id/eprint/434/1/jfs001006.pdf
http://eprints.utm.my/id/eprint/434/
http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.595.519
_version_ 1643643100079325184
score 13.211869

Similar Items