Thermal stress effect in diode end-pumped Nd:YVO4 bar laser

The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency...

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Main Authors: Bidin, Noriah, Krishnan, Ganesan, Khamsan, Nur Ezaan, Zainal, Roslinda, Bakhtiar, Hazri
Format: Book Section
Published: American Institute of Physics 2012
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Online Access:http://eprints.utm.my/id/eprint/36053/
http://dx.doi.org/10.1063/1.4732491
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spelling my.utm.360532017-02-02T05:19:03Z http://eprints.utm.my/id/eprint/36053/ Thermal stress effect in diode end-pumped Nd:YVO4 bar laser Bidin, Noriah Krishnan, Ganesan Khamsan, Nur Ezaan Zainal, Roslinda Bakhtiar, Hazri Q Science The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency is small and high threshold pump power. However the low Dopant crystal is not associated with thermal stress thus no thermal damage. Differently with higher concentration of Nd ions crystal, the laser performance is relatively high but it is accompanied with thermal damage which comprised of microcrack, microfracture and contamination. The high absorption on the doping ions with additional external impurities causes extra heat generation which leads to thermal fracture. American Institute of Physics 2012 Book Section PeerReviewed Bidin, Noriah and Krishnan, Ganesan and Khamsan, Nur Ezaan and Zainal, Roslinda and Bakhtiar, Hazri (2012) Thermal stress effect in diode end-pumped Nd:YVO4 bar laser. In: AIP Conference Proceedings. American Institute of Physics, Zurich, Switzerland, pp. 191-194. ISBN 978-073541056-5 http://dx.doi.org/10.1063/1.4732491 DOI:10.1063/1.4732491
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic Q Science
spellingShingle Q Science
Bidin, Noriah
Krishnan, Ganesan
Khamsan, Nur Ezaan
Zainal, Roslinda
Bakhtiar, Hazri
Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
description The thermal stress effect on various doping levels of yttrium vanadate crystal Nd:YVO4 is investigated. Diode end-pumped source was used to obtain the input-output characteristics of the vanadate crystal. The laser performance of the low doping crystal is poor since the optical conversion efficiency is small and high threshold pump power. However the low Dopant crystal is not associated with thermal stress thus no thermal damage. Differently with higher concentration of Nd ions crystal, the laser performance is relatively high but it is accompanied with thermal damage which comprised of microcrack, microfracture and contamination. The high absorption on the doping ions with additional external impurities causes extra heat generation which leads to thermal fracture.
format Book Section
author Bidin, Noriah
Krishnan, Ganesan
Khamsan, Nur Ezaan
Zainal, Roslinda
Bakhtiar, Hazri
author_facet Bidin, Noriah
Krishnan, Ganesan
Khamsan, Nur Ezaan
Zainal, Roslinda
Bakhtiar, Hazri
author_sort Bidin, Noriah
title Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
title_short Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
title_full Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
title_fullStr Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
title_full_unstemmed Thermal stress effect in diode end-pumped Nd:YVO4 bar laser
title_sort thermal stress effect in diode end-pumped nd:yvo4 bar laser
publisher American Institute of Physics
publishDate 2012
url http://eprints.utm.my/id/eprint/36053/
http://dx.doi.org/10.1063/1.4732491
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score 13.211869