Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping
A chemically doped graphene-based three-branch nanojunction device is fabricated on a SiO 2/p-Si substrate, and its nonlinear operation is characterized at room temperature (RT). By polyethyleneimine doping, the fabricated device shows improved field effect mobility of 14 800 and 16 100 cm 2/Vs for...
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2012
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my.utm.334992018-11-30T06:37:21Z http://eprints.utm.my/id/eprint/33499/ Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping Abd. Rahman, Shaharin Fadzli Kasai, Seiya Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering A chemically doped graphene-based three-branch nanojunction device is fabricated on a SiO 2/p-Si substrate, and its nonlinear operation is characterized at room temperature (RT). By polyethyleneimine doping, the fabricated device shows improved field effect mobility of 14 800 and 16 100 cm 2/Vs for electron and holes, respectively. The device clearly exhibits nonlinearity in voltage transfer curves at RT. The curvature of the transfer curve can be controlled by using the back gate voltage, and its polarity abruptly switches near the Dirac point because of the carrier type change. The observed behaviour can be quantitatively explained in terms of the difference in the amounts of gate-induced carriers in the two input branches. AIP Publishing 2012-05 Article PeerReviewed Abd. Rahman, Shaharin Fadzli and Kasai, Seiya and Hashim, Abdul Manaf (2012) Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping. Applied Physics Letters, 100 (19). pp. 1-3. ISSN 0003-6951 http://dx.doi.org/10.1063/1.4711035 DOI:10.1063/1.4711035 |
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TK Electrical engineering. Electronics Nuclear engineering Abd. Rahman, Shaharin Fadzli Kasai, Seiya Hashim, Abdul Manaf Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| description |
A chemically doped graphene-based three-branch nanojunction device is fabricated on a SiO 2/p-Si substrate, and its nonlinear operation is characterized at room temperature (RT). By polyethyleneimine doping, the fabricated device shows improved field effect mobility of 14 800 and 16 100 cm 2/Vs for electron and holes, respectively. The device clearly exhibits nonlinearity in voltage transfer curves at RT. The curvature of the transfer curve can be controlled by using the back gate voltage, and its polarity abruptly switches near the Dirac point because of the carrier type change. The observed behaviour can be quantitatively explained in terms of the difference in the amounts of gate-induced carriers in the two input branches. |
| format |
Article |
| author |
Abd. Rahman, Shaharin Fadzli Kasai, Seiya Hashim, Abdul Manaf |
| author_facet |
Abd. Rahman, Shaharin Fadzli Kasai, Seiya Hashim, Abdul Manaf |
| author_sort |
Abd. Rahman, Shaharin Fadzli |
| title |
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| title_short |
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| title_full |
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| title_fullStr |
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| title_full_unstemmed |
Room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| title_sort |
room temperature nonlinear operation of a graphene-based three-branch nanojunction device with chemical doping |
| publisher |
AIP Publishing |
| publishDate |
2012 |
| url |
http://eprints.utm.my/id/eprint/33499/ http://dx.doi.org/10.1063/1.4711035 |
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1643649348059267072 |
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13.250246 |