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Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering

The role of annealing temperature on the structural and optical properties of Ge and Si nanoislands deposited on Si(100) grown by radio frequency magnetron sputtering technique are studied. Atomic force microscopy confirmed the formation of Si and Ge nanoislands with estimated sizes lower than 100 n...

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Main Authors: Samavati, Alireza, Aldaw, Fatima, Ghoshal, Sib Krishna, Othaman, Zulkafli, Sakrani, Samsudi
Format: Article
Published: Forum of Chalcogeniders 2012
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/32883/
http://www.chalcogen.infim.ro/65_Samavati.pdf
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spelling my.utm.328832019-03-31T08:23:34Z http://eprints.utm.my/id/eprint/32883/ Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering Samavati, Alireza Aldaw, Fatima Ghoshal, Sib Krishna Othaman, Zulkafli Sakrani, Samsudi QC Physics The role of annealing temperature on the structural and optical properties of Ge and Si nanoislands deposited on Si(100) grown by radio frequency magnetron sputtering technique are studied. Atomic force microscopy confirmed the formation of Si and Ge nanoislands with estimated sizes lower than 100 nm and 45 nm respectively. The room temperature photoluminescence spectra for Si revealed an emission peak at 2.53 eV which is attributed to the formation of Si nanoislands whereas the observed strong luminescence peak at 3.22 eV for Ge nanoislands is attributed to the quantum size effect. A shift in the PL peak is observed upon annealing which is due to effect of quantum confinement and surface passivation by oxygen. The thermal annealing at 600 0C is found to play an important role in controlling the shape, number density, root mean square roughness and the energy shift of the luminescence band for both Si and Ge nanoislands. The influence of annealing on growth morphology for Ge nanoislands is appeared to be stronger than Si. The growth mechanism and the luminescence is analyzed and compared with other observations. Forum of Chalcogeniders 2012-05 Article PeerReviewed Samavati, Alireza and Aldaw, Fatima and Ghoshal, Sib Krishna and Othaman, Zulkafli and Sakrani, Samsudi (2012) Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering. Journal of Ovonic Research, 8 (3). pp. 65-72. ISSN 1842-2403 http://www.chalcogen.infim.ro/65_Samavati.pdf
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic QC Physics
spellingShingle QC Physics
Samavati, Alireza
Aldaw, Fatima
Ghoshal, Sib Krishna
Othaman, Zulkafli
Sakrani, Samsudi
Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
description The role of annealing temperature on the structural and optical properties of Ge and Si nanoislands deposited on Si(100) grown by radio frequency magnetron sputtering technique are studied. Atomic force microscopy confirmed the formation of Si and Ge nanoislands with estimated sizes lower than 100 nm and 45 nm respectively. The room temperature photoluminescence spectra for Si revealed an emission peak at 2.53 eV which is attributed to the formation of Si nanoislands whereas the observed strong luminescence peak at 3.22 eV for Ge nanoislands is attributed to the quantum size effect. A shift in the PL peak is observed upon annealing which is due to effect of quantum confinement and surface passivation by oxygen. The thermal annealing at 600 0C is found to play an important role in controlling the shape, number density, root mean square roughness and the energy shift of the luminescence band for both Si and Ge nanoislands. The influence of annealing on growth morphology for Ge nanoislands is appeared to be stronger than Si. The growth mechanism and the luminescence is analyzed and compared with other observations.
format Article
author Samavati, Alireza
Aldaw, Fatima
Ghoshal, Sib Krishna
Othaman, Zulkafli
Sakrani, Samsudi
author_facet Samavati, Alireza
Aldaw, Fatima
Ghoshal, Sib Krishna
Othaman, Zulkafli
Sakrani, Samsudi
author_sort Samavati, Alireza
title Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
title_short Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
title_full Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
title_fullStr Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
title_full_unstemmed Light emitting germanium and silicon nanoislands grown by RF magnetron sputtering
title_sort light emitting germanium and silicon nanoislands grown by rf magnetron sputtering
publisher Forum of Chalcogeniders
publishDate 2012
url http://eprints.utm.my/id/eprint/32883/
http://www.chalcogen.infim.ro/65_Samavati.pdf
_version_ 1643649168447635456
score 13.211869

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