Open-gated ph sensor fabricated on an undoped-algan/gan hemt structure
The sensing responses in aqueous solution of an open-gated pH sensor fabricated on an AlGaN/GaN high-electron-mobility-transistor (HEMT) structure are investigated. Under air-exposed ambient conditions, the open-gated undoped AlGaN/GaN HEMT only shows the presence of a linear current region. This se...
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| Main Authors: | , , , , |
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| Format: | Article |
| Published: |
Molecular Diversity Preservation International
2011
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/29736/ http://dx.doi.org/10.3390/s110303067 |
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