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Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application

The design and RF characteristics of planar dipole antennas facilitated with coplanar waveguide (CPW) structure on semi-insulated GaAs are performed and confirmed to work in super high frequency (SHF) range. As expected, the fundamental resonant frequency shifts to higher frequency when the length o...

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Main Authors: Mustafa, F., Hashim, Abdul Manaf, Parimon, N., Abd Rahman, Shaharin Fadzli, Rahman, A. R. A., Osman, M. N., Aziz, A. A., Hashim, M. R.
Format: Article
Language:English
Published: IOP Publishing 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/29678/2/1757-899X_17_1_012023.pdf
http://eprints.utm.my/id/eprint/29678/
http://dx.doi.org/10.1088/1757-899X/17/1/012023
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spelling my.utm.296782017-10-13T13:51:24Z http://eprints.utm.my/id/eprint/29678/ Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application Mustafa, F. Hashim, Abdul Manaf Parimon, N. Abd Rahman, Shaharin Fadzli Rahman, A. R. A. Osman, M. N. Aziz, A. A. Hashim, M. R. TK Electrical engineering. Electronics Nuclear engineering The design and RF characteristics of planar dipole antennas facilitated with coplanar waveguide (CPW) structure on semi-insulated GaAs are performed and confirmed to work in super high frequency (SHF) range. As expected, the fundamental resonant frequency shifts to higher frequency when the length of antenna decreases. Interestingly, the resonant frequencies of antenna are almost unchanged with the variation of antenna width and metal thickness. It is shown experimentally that return loss down to -54 dB with a metal thickness of 50 nm is obtainable. Preliminary investigation on design, fabrication, and DC and RF characteristics of the integrated device (planar dipole antenna + Schottky diode) on AlGaAs/GaAs HEMT structure is presented. From the preliminary direct irradiation experiments using the integrated device, the Schottky diode is not turned on due to weak reception of RF signal by dipole antenna. Further extensive considerations on the polarization of irradiation etc. need to be carried out in order to improve the signal reception. These preliminary results provide a new breakthrough for on-chip electronic device application in nanosystems. IOP Publishing 2011 Article PeerReviewed text/html en http://eprints.utm.my/id/eprint/29678/2/1757-899X_17_1_012023.pdf Mustafa, F. and Hashim, Abdul Manaf and Parimon, N. and Abd Rahman, Shaharin Fadzli and Rahman, A. R. A. and Osman, M. N. and Aziz, A. A. and Hashim, M. R. (2011) Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application. IOP Conference Series: Materials Science and Engineering, 17 (1). pp. 1-11. ISSN 1757-8981 http://dx.doi.org/10.1088/1757-899X/17/1/012023 DOI:10.1088/1757-899X/17/1/012023
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Mustafa, F.
Hashim, Abdul Manaf
Parimon, N.
Abd Rahman, Shaharin Fadzli
Rahman, A. R. A.
Osman, M. N.
Aziz, A. A.
Hashim, M. R.
Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
description The design and RF characteristics of planar dipole antennas facilitated with coplanar waveguide (CPW) structure on semi-insulated GaAs are performed and confirmed to work in super high frequency (SHF) range. As expected, the fundamental resonant frequency shifts to higher frequency when the length of antenna decreases. Interestingly, the resonant frequencies of antenna are almost unchanged with the variation of antenna width and metal thickness. It is shown experimentally that return loss down to -54 dB with a metal thickness of 50 nm is obtainable. Preliminary investigation on design, fabrication, and DC and RF characteristics of the integrated device (planar dipole antenna + Schottky diode) on AlGaAs/GaAs HEMT structure is presented. From the preliminary direct irradiation experiments using the integrated device, the Schottky diode is not turned on due to weak reception of RF signal by dipole antenna. Further extensive considerations on the polarization of irradiation etc. need to be carried out in order to improve the signal reception. These preliminary results provide a new breakthrough for on-chip electronic device application in nanosystems.
format Article
author Mustafa, F.
Hashim, Abdul Manaf
Parimon, N.
Abd Rahman, Shaharin Fadzli
Rahman, A. R. A.
Osman, M. N.
Aziz, A. A.
Hashim, M. R.
author_facet Mustafa, F.
Hashim, Abdul Manaf
Parimon, N.
Abd Rahman, Shaharin Fadzli
Rahman, A. R. A.
Osman, M. N.
Aziz, A. A.
Hashim, M. R.
author_sort Mustafa, F.
title Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
title_short Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
title_full Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
title_fullStr Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
title_full_unstemmed Fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
title_sort fabrication and characterization of planar dipole antenna integrated with gaas based-schottky diode for on-chip electronic device application
publisher IOP Publishing
publishDate 2011
url http://eprints.utm.my/id/eprint/29678/2/1757-899X_17_1_012023.pdf
http://eprints.utm.my/id/eprint/29678/
http://dx.doi.org/10.1088/1757-899X/17/1/012023
_version_ 1643648352625098752
score 13.211869

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