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Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon

We present a method to synthesize submicrometer germanium dioxide (GeO2) on porous silicon (PS) by electrochemical deposition. The PS was electrochemically prepared in HF based electrolyte. GeCl4 was directly hydrolyzed by hydrogen peroxide to produce pure GeO2 and then electrochemically deposited o...

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Main Authors: Jawada, M. J., Hashima, M. R., Al Obaidi, Nihad K. Ali
Format: Article
Published: ECS - The Electrochemical Society 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/29424/
http://dx.doi.org/10.1149/1.3516605
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spelling my.utm.294242019-03-31T08:23:00Z http://eprints.utm.my/id/eprint/29424/ Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon Jawada, M. J. Hashima, M. R. Al Obaidi, Nihad K. Ali TK Electrical engineering. Electronics Nuclear engineering We present a method to synthesize submicrometer germanium dioxide (GeO2) on porous silicon (PS) by electrochemical deposition. The PS was electrochemically prepared in HF based electrolyte. GeCl4 was directly hydrolyzed by hydrogen peroxide to produce pure GeO2 and then electrochemically deposited on PS. The scanning electron microscopy results showed that the GeO2 structures are uniform in shape with diameter ∼500 nm. The photoluminescence spectrum showed a prominent peak related to GeO2 at about 400 nm. The results indicated potential applications of GeO2 on the silicon based substrate for future optoelectronic nanodevices in the visible region using a simple fabrication method. ECS - The Electrochemical Society 2011 Article PeerReviewed Jawada, M. J. and Hashima, M. R. and Al Obaidi, Nihad K. Ali (2011) Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon. Electrochemical and Solid State Letters, 14 (2). D17-D19. ISSN 1099-0062 http://dx.doi.org/10.1149/1.3516605 DOI:10.1149/1.3516605
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Jawada, M. J.
Hashima, M. R.
Al Obaidi, Nihad K. Ali
Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
description We present a method to synthesize submicrometer germanium dioxide (GeO2) on porous silicon (PS) by electrochemical deposition. The PS was electrochemically prepared in HF based electrolyte. GeCl4 was directly hydrolyzed by hydrogen peroxide to produce pure GeO2 and then electrochemically deposited on PS. The scanning electron microscopy results showed that the GeO2 structures are uniform in shape with diameter ∼500 nm. The photoluminescence spectrum showed a prominent peak related to GeO2 at about 400 nm. The results indicated potential applications of GeO2 on the silicon based substrate for future optoelectronic nanodevices in the visible region using a simple fabrication method.
format Article
author Jawada, M. J.
Hashima, M. R.
Al Obaidi, Nihad K. Ali
author_facet Jawada, M. J.
Hashima, M. R.
Al Obaidi, Nihad K. Ali
author_sort Jawada, M. J.
title Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
title_short Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
title_full Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
title_fullStr Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
title_full_unstemmed Synthesis, structural, and optical properties of electrochemically deposited GeO2 on porous silicon
title_sort synthesis, structural, and optical properties of electrochemically deposited geo2 on porous silicon
publisher ECS - The Electrochemical Society
publishDate 2011
url http://eprints.utm.my/id/eprint/29424/
http://dx.doi.org/10.1149/1.3516605
_version_ 1643648295302594560
score 13.211869

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