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SnS thin films prepared by encapsulated sulfurization

Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and anneale...

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Main Authors: Sakrani, Samsudi, D. Hutagalung, Sabar, Wahab, Yusof, Moin, Mastura
Format: Article
Language:English
Published: Persatuan Sains & Teknologi Keadaan Pepejal Malaysia 1996
Subjects:
QC Physics
Online Access:http://eprints.utm.my/id/eprint/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf
http://eprints.utm.my/id/eprint/2867/
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spelling my.utm.28672010-06-01T03:05:46Z http://eprints.utm.my/id/eprint/2867/ SnS thin films prepared by encapsulated sulfurization Sakrani, Samsudi D. Hutagalung, Sabar Wahab, Yusof Moin, Mastura QC Physics Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned. Persatuan Sains & Teknologi Keadaan Pepejal Malaysia 1996 Article PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf Sakrani, Samsudi and D. Hutagalung, Sabar and Wahab, Yusof and Moin, Mastura (1996) SnS thin films prepared by encapsulated sulfurization. Buletin of Malaysian Solid State Science & Technology, 6 (2). pp. 43-50. ISSN 0128-5637
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic QC Physics
spellingShingle QC Physics
Sakrani, Samsudi
D. Hutagalung, Sabar
Wahab, Yusof
Moin, Mastura
SnS thin films prepared by encapsulated sulfurization
description Tin sulphide (SnS) thin films were grown using a method called encapsulated sulfurization from the Sn/S stacked layers previously coated on a glass substrate at pressure 10-5 mbar and film thickness ratios; Sn: S= 1:1, 1:2, 1:3. In this technique the samples were placed in a carbon block and annealed in argon gas at temperatures between 260-450 oC for three hours to allow the formation of SnS thin films by chemical reaction which took place in the Sn/S bilayer. In the early stage (260 oC) Sn was sulfurized between 300-400 oC changed the process rapidly and dominantly into SnS with improved crystallinity. The measured resistivities were found to be between 0.65-2.92 Sm-1 over the range of substrate temperature concerned.
format Article
author Sakrani, Samsudi
D. Hutagalung, Sabar
Wahab, Yusof
Moin, Mastura
author_facet Sakrani, Samsudi
D. Hutagalung, Sabar
Wahab, Yusof
Moin, Mastura
author_sort Sakrani, Samsudi
title SnS thin films prepared by encapsulated sulfurization
title_short SnS thin films prepared by encapsulated sulfurization
title_full SnS thin films prepared by encapsulated sulfurization
title_fullStr SnS thin films prepared by encapsulated sulfurization
title_full_unstemmed SnS thin films prepared by encapsulated sulfurization
title_sort sns thin films prepared by encapsulated sulfurization
publisher Persatuan Sains & Teknologi Keadaan Pepejal Malaysia
publishDate 1996
url http://eprints.utm.my/id/eprint/2867/1/SnS_thin_films_prepared_by_encapsulated_sulfurization_V6.pdf
http://eprints.utm.my/id/eprint/2867/
_version_ 1643643677436805120
score 13.211869

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