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Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate

This paper investigates the size, density and uniformity of double layer In0.5Ga0.5As nanostructures as a function of GaAs buffer layer thickness. Observation of surface morphology by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) shows that the dots formation...

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Main Authors: Aryanto, Didik, Ismail, Abd. Khamim, Roslan, Shahrizar, Othaman, Zulkafli
Format: Book Section
Language:English
Published: Penerbit UTM 2008
Subjects:
Q Science (General)
QD Chemistry
Online Access:http://eprints.utm.my/id/eprint/27734/1/AbdKhamimIsmail2008_SurfaceMorphologyandLateralDistributionofSelf.pdf
http://eprints.utm.my/id/eprint/27734/
http://www.penerbit.utm.my/bookchapterdoc/FS/bookchapter_fs04.pdf
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spelling my.utm.277342017-10-10T03:28:27Z http://eprints.utm.my/id/eprint/27734/ Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate Aryanto, Didik Ismail, Abd. Khamim Roslan, Shahrizar Othaman, Zulkafli Q Science (General) QD Chemistry This paper investigates the size, density and uniformity of double layer In0.5Ga0.5As nanostructures as a function of GaAs buffer layer thickness. Observation of surface morphology by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) shows that the dots formation depends strongly on the GaAs buffer layer thickness. The size of dots reduce with the increase in the buffer layer thickness. Selfassembled In0.5Ga0.5As nanostructures grown on GaAs (100) substrate with a 200 nm thick GaAs buffer layer has high-dot density (4.68 x 1010 cm-2) and more uniform dot size. Increasing and decreasing of the buffer layer thickness causes the density of small dots to be reduced with several large dots (nano-islands) distributed randomly on the surface. The GaAs buffer and spacer layer thickness in the growth of In0.5Ga0.5As nanostructures has important effect on the dots formation. Penerbit UTM 2008 Book Section PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/27734/1/AbdKhamimIsmail2008_SurfaceMorphologyandLateralDistributionofSelf.pdf Aryanto, Didik and Ismail, Abd. Khamim and Roslan, Shahrizar and Othaman, Zulkafli (2008) Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate. In: Advances In Fundamentals And Social Sciences. Penerbit UTM, Johor, pp. 7-14. ISBN 978-983-52-0609-2 http://www.penerbit.utm.my/bookchapterdoc/FS/bookchapter_fs04.pdf
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic Q Science (General)
QD Chemistry
spellingShingle Q Science (General)
QD Chemistry
Aryanto, Didik
Ismail, Abd. Khamim
Roslan, Shahrizar
Othaman, Zulkafli
Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
description This paper investigates the size, density and uniformity of double layer In0.5Ga0.5As nanostructures as a function of GaAs buffer layer thickness. Observation of surface morphology by atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) shows that the dots formation depends strongly on the GaAs buffer layer thickness. The size of dots reduce with the increase in the buffer layer thickness. Selfassembled In0.5Ga0.5As nanostructures grown on GaAs (100) substrate with a 200 nm thick GaAs buffer layer has high-dot density (4.68 x 1010 cm-2) and more uniform dot size. Increasing and decreasing of the buffer layer thickness causes the density of small dots to be reduced with several large dots (nano-islands) distributed randomly on the surface. The GaAs buffer and spacer layer thickness in the growth of In0.5Ga0.5As nanostructures has important effect on the dots formation.
format Book Section
author Aryanto, Didik
Ismail, Abd. Khamim
Roslan, Shahrizar
Othaman, Zulkafli
author_facet Aryanto, Didik
Ismail, Abd. Khamim
Roslan, Shahrizar
Othaman, Zulkafli
author_sort Aryanto, Didik
title Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
title_short Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
title_full Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
title_fullStr Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
title_full_unstemmed Surface morphology and lateral distribution of self-assembled in0.5Ga0.5AS nanostructures grown on gaAs (100) substrate
title_sort surface morphology and lateral distribution of self-assembled in0.5ga0.5as nanostructures grown on gaas (100) substrate
publisher Penerbit UTM
publishDate 2008
url http://eprints.utm.my/id/eprint/27734/1/AbdKhamimIsmail2008_SurfaceMorphologyandLateralDistributionofSelf.pdf
http://eprints.utm.my/id/eprint/27734/
http://www.penerbit.utm.my/bookchapterdoc/FS/bookchapter_fs04.pdf
_version_ 1643647948502859776
score 13.211869

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