Cover Image

Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition

Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rate...

Full description

Saved in:
Bibliographic Details
Main Author: Hashim, Abdul Manaf
Format: Article
Published: Asian Network for Scientific Information 2008
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/25919/
http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.utm.25919
record_format eprints
spelling my.utm.259192018-03-22T10:51:04Z http://eprints.utm.my/id/eprint/25919/ Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition Hashim, Abdul Manaf TK Electrical engineering. Electronics Nuclear engineering Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr. Asian Network for Scientific Information 2008 Article PeerReviewed Hashim, Abdul Manaf (2008) Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition. Journal of Applied Sciences, 8 (19). pp. 3473-3478. ISSN 1812-5654 http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf doi:10.3923/jas.2008.3473.3478
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashim, Abdul Manaf
Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
description Surface carbonization on Si (100) and Si (111) using acetylene as single carbon source was performed in a low-pressure chemical vapor deposition chamber using rapid thermal technique. The dependence of crystallinity, crystal orientation and bonding state of carbonization layer on acetylene flow rates, pressures, temperatures and times were evaluated using X-ray diffractometry and electron probe microanalysis analytical techniques. The stoichiometric carbonization layer with good crystallinity, crystal orientation and bonding state was successfully formed at 1100°C with C2H2 flow rate of 2 sccm and reaction pressure of 0.3 Torr.
format Article
author Hashim, Abdul Manaf
author_facet Hashim, Abdul Manaf
author_sort Hashim, Abdul Manaf
title Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_short Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_full Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_fullStr Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_full_unstemmed Carbonization layer obtained by acetylene reaction with Si (100) and (111) surface using low pressure chemical vapor deposition
title_sort carbonization layer obtained by acetylene reaction with si (100) and (111) surface using low pressure chemical vapor deposition
publisher Asian Network for Scientific Information
publishDate 2008
url http://eprints.utm.my/id/eprint/25919/
http://scialert.net/qredirect.php?doi=jas.2008.3473.3478&linkid=pdf
_version_ 1643647627044061184
score 13.211869

Similar Items