Die Design Of A Transmitting Transistor In A 175 MHz Power Amplifier At 28V
This paper presents the die design of a NPN transistor, which is targeted for operation in a power amplifier. The proposed die is designed using epitaxial planar bipolar junction technology. The transistor die is designed for operation in the 175MHz frequency range with a 28V biasing. It is capable...
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Book Section |
| Language: | English |
| Published: |
IEEE
2004
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/2042/1/RajahIsmailRajah2004__DieDesignOfTransmittingTransistor.pdf http://eprints.utm.my/id/eprint/2042/ http://ieeexplore.ieee.org/document/1620864/ |
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