Impacts of ultrathin biaxial strained silicon on ultimate drive velocity, effective gate capacitance and threshold voltage
The biaxial strained silicon has attracted much interest in manufacturing industry due to the potential enhancement in carrier-transport property. The biaxial strain lifts the degeneracy of silicon valence and conduction bands, leading to a reduction in intervalley scattering and lower effective mas...
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Main Author: | Yau , Wei Heong |
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Format: | Thesis |
Published: |
2010
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Online Access: | http://eprints.utm.my/id/eprint/16454/ http://libraryopac.utm.my/client/en_AU/main/search/results?qu=Impacts+of+ultrathin+biaxial+strained+silicon+on+ultimate+drive+velocity%2C+effective+gate+capacitance+and+threshold+voltage&te= |
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