Effect of spacer layer thickness on morphology and optical properties of self-assembled in0.5ga0.5as quantum dots
The effect of GaAs spacer layer thickness on morphology and optical properties of Ino.sGao.sAsIGaAs quantum dots (QDs) has been studied. The uncapped double stacked 1no.sGaosAs QDs were grown using metal-organic chemical vapour deposition (MOCVD with trimethylgallium (TMGa), trimethylindium (TMln) a...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Published: |
2009
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/15127/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:100779 |
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