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Gallium arsenide nanowires formed by au-assisted metal organic chemical vapor deposition: effect of growth temperature

We have investigated the growth of gallium arsenide (GaAs) nanowires as a function of temperatures in metal organic chemical vapor deposition (MOCVD) to establish the mechanisms that govern wire growth and to optimize growth conditions. The growth follows the vapor-liquid-solid method by applying na...

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Bibliographic Details
Main Authors: Muhammad, Rosnita, Othaman, Zulkafli, Wahab, Yussof, Sakrani, Samsudi, W. Ahmad , W. Faizal, Nazri, Mohd.
Format: Article
Language:English
English
Published: Canadian Center of Science and Education 2009
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/13708/1/RosnitaMuhammad2009_GalliumArsenideNanowiresFormed.pdf
http://eprints.utm.my/id/eprint/13708/2/2816
http://eprints.utm.my/id/eprint/13708/
https://www.researchgate.net/publication/304746385_Gallium_Arsenide_nanowires_for_electrode_application_in_solid_oxide_fuel_cell_grown_using_metal_organic_chemical_vapor_deposition
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http://eprints.utm.my/id/eprint/13708/1/RosnitaMuhammad2009_GalliumArsenideNanowiresFormed.pdf
http://eprints.utm.my/id/eprint/13708/2/2816
http://eprints.utm.my/id/eprint/13708/
https://www.researchgate.net/publication/304746385_Gallium_Arsenide_nanowires_for_electrode_application_in_solid_oxide_fuel_cell_grown_using_metal_organic_chemical_vapor_deposition

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