Analytical study of carriers in silicon nanowires
The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift v...
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2009
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my.utm.136822017-02-13T00:46:49Z http://eprints.utm.my/id/eprint/13682/ Analytical study of carriers in silicon nanowires Ahmadi, Mohammad Taghi Fallahpour, Amir Hossein Allahdadian, Javad Kouhnavard, Mojgan Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor 2009-09 Article PeerReviewed Ahmadi, Mohammad Taghi and Fallahpour, Amir Hossein and Allahdadian, Javad and Kouhnavard, Mojgan and Ismail, Razali (2009) Analytical study of carriers in silicon nanowires. MASAUM Journal of Basic and Applied Sciences , 1 (2). pp. 233-239. https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires |
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TK Electrical engineering. Electronics Nuclear engineering Ahmadi, Mohammad Taghi Fallahpour, Amir Hossein Allahdadian, Javad Kouhnavard, Mojgan Ismail, Razali Analytical study of carriers in silicon nanowires |
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The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor |
| format |
Article |
| author |
Ahmadi, Mohammad Taghi Fallahpour, Amir Hossein Allahdadian, Javad Kouhnavard, Mojgan Ismail, Razali |
| author_facet |
Ahmadi, Mohammad Taghi Fallahpour, Amir Hossein Allahdadian, Javad Kouhnavard, Mojgan Ismail, Razali |
| author_sort |
Ahmadi, Mohammad Taghi |
| title |
Analytical study of carriers in silicon nanowires |
| title_short |
Analytical study of carriers in silicon nanowires |
| title_full |
Analytical study of carriers in silicon nanowires |
| title_fullStr |
Analytical study of carriers in silicon nanowires |
| title_full_unstemmed |
Analytical study of carriers in silicon nanowires |
| title_sort |
analytical study of carriers in silicon nanowires |
| publishDate |
2009 |
| url |
http://eprints.utm.my/id/eprint/13682/ https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires |
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1643646253218660352 |
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13.250246 |