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Analytical study of carriers in silicon nanowires

The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift v...

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Main Authors: Ahmadi, Mohammad Taghi, Fallahpour, Amir Hossein, Allahdadian, Javad, Kouhnavard, Mojgan, Ismail, Razali
Format: Article
Published: 2009
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utm.my/id/eprint/13682/
https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires
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spelling my.utm.136822017-02-13T00:46:49Z http://eprints.utm.my/id/eprint/13682/ Analytical study of carriers in silicon nanowires Ahmadi, Mohammad Taghi Fallahpour, Amir Hossein Allahdadian, Javad Kouhnavard, Mojgan Ismail, Razali TK Electrical engineering. Electronics Nuclear engineering The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor 2009-09 Article PeerReviewed Ahmadi, Mohammad Taghi and Fallahpour, Amir Hossein and Allahdadian, Javad and Kouhnavard, Mojgan and Ismail, Razali (2009) Analytical study of carriers in silicon nanowires. MASAUM Journal of Basic and Applied Sciences , 1 (2). pp. 233-239. https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Ahmadi, Mohammad Taghi
Fallahpour, Amir Hossein
Allahdadian, Javad
Kouhnavard, Mojgan
Ismail, Razali
Analytical study of carriers in silicon nanowires
description The limitations on carrier (holes and electrons) drift due to high-field streamlining also randomly velocity vector in equilibrium is reported. Asymmetrical distribution function that converts randomness in zero-field to streamlined one in a very high electric field is employed. The ultimate drift velocity is found to be appropriate thermal velocity for a given dimensionality for non-degenerately doped nanostructure. However, the ultimate drift velocity is the Fermi velocity for degenerately doped nanostructures. Quantum and high-field effects controlling the transport of carrier in nanostructures are described. The results obtained are applied to the modeling of a nanowire transistor
format Article
author Ahmadi, Mohammad Taghi
Fallahpour, Amir Hossein
Allahdadian, Javad
Kouhnavard, Mojgan
Ismail, Razali
author_facet Ahmadi, Mohammad Taghi
Fallahpour, Amir Hossein
Allahdadian, Javad
Kouhnavard, Mojgan
Ismail, Razali
author_sort Ahmadi, Mohammad Taghi
title Analytical study of carriers in silicon nanowires
title_short Analytical study of carriers in silicon nanowires
title_full Analytical study of carriers in silicon nanowires
title_fullStr Analytical study of carriers in silicon nanowires
title_full_unstemmed Analytical study of carriers in silicon nanowires
title_sort analytical study of carriers in silicon nanowires
publishDate 2009
url http://eprints.utm.my/id/eprint/13682/
https://www.researchgate.net/publication/260835448_Analytical_Study_of_Carriers_in_Silicon_NanoWires
_version_ 1643646253218660352
score 13.211869

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