Design approach for tune able CMOS active inductor
Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Activ...
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2004
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my.utm.121232011-07-19T10:07:26Z http://eprints.utm.my/id/eprint/12123/ Design approach for tune able CMOS active inductor Rafiq, Sharman Abu Khari, A'ain Mohd., Azmi Huang, Min Zhe TK Electrical engineering. Electronics Nuclear engineering Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH - 60nH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. IEEE Majlis, BY Shaari, S 2004-12-07 Book Section PeerReviewed Rafiq, Sharman and Abu Khari, A'ain and Mohd., Azmi and Huang, Min Zhe (2004) Design approach for tune able CMOS active inductor. In: Proceedings 2004 IEEE International Conference on Semiconductor Electronics. IEEE, USA, pp. 143-147. ISBN 0-7803-8658-2 http://dx.doi.org/10.1109/SMELEC.2004.1620856 doi:10.1109/SMELEC.2004.1620856 |
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TK Electrical engineering. Electronics Nuclear engineering |
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TK Electrical engineering. Electronics Nuclear engineering Rafiq, Sharman Abu Khari, A'ain Mohd., Azmi Huang, Min Zhe Design approach for tune able CMOS active inductor |
| description |
Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH - 60nH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
| author2 |
Majlis, BY |
| author_facet |
Majlis, BY Rafiq, Sharman Abu Khari, A'ain Mohd., Azmi Huang, Min Zhe |
| format |
Book Section |
| author |
Rafiq, Sharman Abu Khari, A'ain Mohd., Azmi Huang, Min Zhe |
| author_sort |
Rafiq, Sharman |
| title |
Design approach for tune able CMOS active inductor |
| title_short |
Design approach for tune able CMOS active inductor |
| title_full |
Design approach for tune able CMOS active inductor |
| title_fullStr |
Design approach for tune able CMOS active inductor |
| title_full_unstemmed |
Design approach for tune able CMOS active inductor |
| title_sort |
design approach for tune able cmos active inductor |
| publisher |
IEEE |
| publishDate |
2004 |
| url |
http://eprints.utm.my/id/eprint/12123/ http://dx.doi.org/10.1109/SMELEC.2004.1620856 |
| _version_ |
1643645865763536896 |
| score |
13.250246 |