Design approach for tune able CMOS active inductor
Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Activ...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Book Section |
| Published: |
IEEE
2004
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| Subjects: | |
| Online Access: | http://eprints.utm.my/id/eprint/12123/ http://dx.doi.org/10.1109/SMELEC.2004.1620856 |
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| Summary: | Design approach for differential CMOS Active Inductor with a self-resonant frequency around 1.58GRz - 3.98GHz is presented. The architecture is based on a differential gyrator-C topology to transform intrinsic capacitance of a MOSFET to the emulated inductance. Due to high power consumption of Active Inductor, only a current source is used. This design has the capability to tune the inductor and Q-factor values from 10nH - 60nH and 20 - 60 respectively. Furthermore, a new technique is proposed to ensure smaller inductance value can be achieved with smaller power consumption and die area. |
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