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Electrical characterization of the high speed I/O data bus using cross correlation method

High speed data transportation between the CPU and peripherals on the PC motherboard is needed to support heavy data traffic such as multimedia, games and broadband networks. At multi Gbits/sec high speed, impedance mismatch between the CPU and peripherals becomes critical and limits the possible ma...

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Bibliographic Details
Main Authors: Huat, Jimmy Since Huang, Ahmad, Zuri Shaameri, Teong, Guan Yew
Other Authors: Bi, K. Y.
Format: Book Section
Language:English
Published: IEEE 2007
Subjects:
QA75 Electronic computers. Computer science
QA76 Computer software
Online Access:http://eprints.utm.my/id/eprint/11687/1/Electrical%20characterization%20of%20the%20high%20speed%20IO%20data%20bus%20using%20cross%20correlation%20method_2007.pdf
http://eprints.utm.my/id/eprint/11687/
http://dx.doi.org/10.1109/ICEPT.2007.4441420
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spelling my.utm.116872017-10-02T04:20:41Z http://eprints.utm.my/id/eprint/11687/ Electrical characterization of the high speed I/O data bus using cross correlation method Huat, Jimmy Since Huang Ahmad, Zuri Shaameri Teong, Guan Yew QA75 Electronic computers. Computer science QA76 Computer software High speed data transportation between the CPU and peripherals on the PC motherboard is needed to support heavy data traffic such as multimedia, games and broadband networks. At multi Gbits/sec high speed, impedance mismatch between the CPU and peripherals becomes critical and limits the possible maximum throughput. The I/O transportation bus can be modeled as a linear time invariant system. The output signal at the receiver is the convolution function of the transfer function and transmitter signal. Due to the complexity of the motherboard ingredient, it is desired to model the I/O bus in black box behavior model. Instead of using traditional passive measurement method such as Time Domain Reflectometry (TDR) and Scattering parameter measurement, cross correlation method is used to find out the impulse response transfer function when the I/O Bus is active. By using MATLAB and SPICE tools, the method is simulated to understand its accuracy and robustness under noisy environment. IEEE Bi, K. Y. Li, M. 2007 Book Section PeerReviewed application/pdf en http://eprints.utm.my/id/eprint/11687/1/Electrical%20characterization%20of%20the%20high%20speed%20IO%20data%20bus%20using%20cross%20correlation%20method_2007.pdf Huat, Jimmy Since Huang and Ahmad, Zuri Shaameri and Teong, Guan Yew (2007) Electrical characterization of the high speed I/O data bus using cross correlation method. In: Icept: 2007 8Th International Conference On Electronics Packaging Technology, Proceedings. IEEE, New York, USA, pp. 240-243. ISBN 978-1-4244-1391-1 http://dx.doi.org/10.1109/ICEPT.2007.4441420 doi:10.1109/ICEPT.2007.4441420
institution Universiti Teknologi Malaysia
building UTM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknologi Malaysia
content_source UTM Institutional Repository
url_provider http://eprints.utm.my/
language English
topic QA75 Electronic computers. Computer science
QA76 Computer software
spellingShingle QA75 Electronic computers. Computer science
QA76 Computer software
Huat, Jimmy Since Huang
Ahmad, Zuri Shaameri
Teong, Guan Yew
Electrical characterization of the high speed I/O data bus using cross correlation method
description High speed data transportation between the CPU and peripherals on the PC motherboard is needed to support heavy data traffic such as multimedia, games and broadband networks. At multi Gbits/sec high speed, impedance mismatch between the CPU and peripherals becomes critical and limits the possible maximum throughput. The I/O transportation bus can be modeled as a linear time invariant system. The output signal at the receiver is the convolution function of the transfer function and transmitter signal. Due to the complexity of the motherboard ingredient, it is desired to model the I/O bus in black box behavior model. Instead of using traditional passive measurement method such as Time Domain Reflectometry (TDR) and Scattering parameter measurement, cross correlation method is used to find out the impulse response transfer function when the I/O Bus is active. By using MATLAB and SPICE tools, the method is simulated to understand its accuracy and robustness under noisy environment.
author2 Bi, K. Y.
author_facet Bi, K. Y.
Huat, Jimmy Since Huang
Ahmad, Zuri Shaameri
Teong, Guan Yew
format Book Section
author Huat, Jimmy Since Huang
Ahmad, Zuri Shaameri
Teong, Guan Yew
author_sort Huat, Jimmy Since Huang
title Electrical characterization of the high speed I/O data bus using cross correlation method
title_short Electrical characterization of the high speed I/O data bus using cross correlation method
title_full Electrical characterization of the high speed I/O data bus using cross correlation method
title_fullStr Electrical characterization of the high speed I/O data bus using cross correlation method
title_full_unstemmed Electrical characterization of the high speed I/O data bus using cross correlation method
title_sort electrical characterization of the high speed i/o data bus using cross correlation method
publisher IEEE
publishDate 2007
url http://eprints.utm.my/id/eprint/11687/1/Electrical%20characterization%20of%20the%20high%20speed%20IO%20data%20bus%20using%20cross%20correlation%20method_2007.pdf
http://eprints.utm.my/id/eprint/11687/
http://dx.doi.org/10.1109/ICEPT.2007.4441420
_version_ 1643645748478214144
score 13.211869

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