Staff View: Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell

Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell

This work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO–Fe2O3/GO thin films and gel electrolyte were prepared using the sol–gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe...

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Main Authors:	Abdullah, Huda, Mahalingam, Savisha, Abu Bakar, Nur Aisyah, Manap, Abreeza, Othman, Mohd. Hafiz Dzarfan, Md. Akhtaruzzaman, Md. Akhtaruzzaman
Format:	Article
Published:	Springer Science and Business Media Deutschland GmbH 2022
Subjects:	QA75 Electronic computers. Computer science TK Electrical engineering. Electronics Nuclear engineering
Online Access:	http://eprints.utm.my/103675/ http://dx.doi.org/10.1007/s00289-021-03708-8
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spelling	my.utm.1036752023-11-23T08:14:22Z http://eprints.utm.my/103675/ Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell Abdullah, Huda Mahalingam, Savisha Abu Bakar, Nur Aisyah Manap, Abreeza Othman, Mohd. Hafiz Dzarfan Md. Akhtaruzzaman, Md. Akhtaruzzaman QA75 Electronic computers. Computer science TK Electrical engineering. Electronics Nuclear engineering This work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO–Fe2O3/GO thin films and gel electrolyte were prepared using the sol–gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe2O3 in ZnO/GO improved the open-circuit voltage and fill factor significantly. However, large amount of Fe2O3 (0.3%) inhibited the electron transport with high electron recombination rate (keff = 3044.62 s−1). The main reason for the low efficiency in ZnO–Fe2O3(0.3%)/GO is due to the energy band misalignment with the failure of the excited electron from the LUMO of dye into the conduction band of ZnO–Fe2O3(0.3%)/GO. The study found that the optimum concentration of Fe2O3 is 0.2% for an efficient DSSC. ZnO–Fe2O3(0.2%)/GO-based DSSC exhibited slow electron recombination of 0.751 s−1. Moreover, the fine nanoparticles of ZnO–Fe2O3(0.2%)/GO observed through field emission electron microscopy show a more porous structure that improved the short-circuit current density in DSSC. Springer Science and Business Media Deutschland GmbH 2022-06 Article PeerReviewed Abdullah, Huda and Mahalingam, Savisha and Abu Bakar, Nur Aisyah and Manap, Abreeza and Othman, Mohd. Hafiz Dzarfan and Md. Akhtaruzzaman, Md. Akhtaruzzaman (2022) Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell. Polymer Bulletin, 79 (6). pp. 4287-4301. ISSN 0170-0839 http://dx.doi.org/10.1007/s00289-021-03708-8 DOI:10.1007/s00289-021-03708-8
institution	Universiti Teknologi Malaysia
building	UTM Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Teknologi Malaysia
content_source	UTM Institutional Repository
url_provider	http://eprints.utm.my/
topic	QA75 Electronic computers. Computer science TK Electrical engineering. Electronics Nuclear engineering
spellingShingle	QA75 Electronic computers. Computer science TK Electrical engineering. Electronics Nuclear engineering Abdullah, Huda Mahalingam, Savisha Abu Bakar, Nur Aisyah Manap, Abreeza Othman, Mohd. Hafiz Dzarfan Md. Akhtaruzzaman, Md. Akhtaruzzaman Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
description	This work aims to study the influence of Fe2O3 in ZnO/GO-based DSSC incorporating PAN-based gel electrolyte. ZnO–Fe2O3/GO thin films and gel electrolyte were prepared using the sol–gel technique via spin-coating and polymerization of polyacrylonitrile (PAN) methods, respectively. The insertion of Fe2O3 in ZnO/GO improved the open-circuit voltage and fill factor significantly. However, large amount of Fe2O3 (0.3%) inhibited the electron transport with high electron recombination rate (keff = 3044.62 s−1). The main reason for the low efficiency in ZnO–Fe2O3(0.3%)/GO is due to the energy band misalignment with the failure of the excited electron from the LUMO of dye into the conduction band of ZnO–Fe2O3(0.3%)/GO. The study found that the optimum concentration of Fe2O3 is 0.2% for an efficient DSSC. ZnO–Fe2O3(0.2%)/GO-based DSSC exhibited slow electron recombination of 0.751 s−1. Moreover, the fine nanoparticles of ZnO–Fe2O3(0.2%)/GO observed through field emission electron microscopy show a more porous structure that improved the short-circuit current density in DSSC.
format	Article
author	Abdullah, Huda Mahalingam, Savisha Abu Bakar, Nur Aisyah Manap, Abreeza Othman, Mohd. Hafiz Dzarfan Md. Akhtaruzzaman, Md. Akhtaruzzaman
author_facet	Abdullah, Huda Mahalingam, Savisha Abu Bakar, Nur Aisyah Manap, Abreeza Othman, Mohd. Hafiz Dzarfan Md. Akhtaruzzaman, Md. Akhtaruzzaman
author_sort	Abdullah, Huda
title	Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
title_short	Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
title_full	Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
title_fullStr	Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
title_full_unstemmed	Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell
title_sort	influence of fe2o3 in zno/go-based dye-sensitized solar cell
publisher	Springer Science and Business Media Deutschland GmbH
publishDate	2022
url	http://eprints.utm.my/103675/ http://dx.doi.org/10.1007/s00289-021-03708-8
_version_	1783876399218556928
score	13.211869

Influence of Fe2O3 in ZnO/GO-based dye-sensitized solar cell

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