Parameter variations of 20NM GAAS junctionless-gate-all-around field-effect transistor with quantum mechanical effects
The scaling down of nanoelectronic device dimension beyond the Moore’s Law era has introduced the use of new material and device architecture of Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). The use of nanomaterial and advanced device architecture allows the mitigation of the short cha...
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| 第一著者: | |
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| フォーマット: | 学位論文 |
| 言語: | English |
| 出版事項: |
2021
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| 主題: | |
| オンライン･アクセス: | http://eprints.utm.my/id/eprint/102679/1/MuhammadFaidzalMohamadRasolMSKE2021.pdf.pdf http://eprints.utm.my/id/eprint/102679/ http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:149310 |
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