Cover Image

Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices

N-type Al:Cu2O semiconductor layers were prepared via cathodic electrodepositions from a copper(II)-lactate complex aqueous solution with added aluminum chloride. Subsequently, the Al:Cu2O/n-ZnO heterojunction and p-Cu2O/ n-Al:Cu2O homojunction photovoltaic devices were constructed by using sequen...

Full description

Saved in:
Bibliographic Details
Main Authors: Hashimoto, Yui, Mohammad Zain, Mohd Zamzuri, Muraoka, Naoki, Inaba, Rieru, Mohamad, Fariza, Khoo, Pei Loon, Izaki, Masanobu
Format: Article
Language:English
Published: ACS publication 2024
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.uthm.edu.my/12388/1/J17849_adbb4f7ff9e514f44ff39a7b76ccf2d1.pdf
http://eprints.uthm.edu.my/12388/
https://doi.org/10.1021/acsaem.4c00019?urlappend=%3Fref%3DPDF&jav=VoR&rel=cite-as
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.uthm.eprints.12388
record_format eprints
spelling my.uthm.eprints.123882025-02-24T08:36:09Z http://eprints.uthm.edu.my/12388/ Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices Hashimoto, Yui Mohammad Zain, Mohd Zamzuri Muraoka, Naoki Inaba, Rieru Mohamad, Fariza Khoo, Pei Loon Izaki, Masanobu TK Electrical engineering. Electronics Nuclear engineering N-type Al:Cu2O semiconductor layers were prepared via cathodic electrodepositions from a copper(II)-lactate complex aqueous solution with added aluminum chloride. Subsequently, the Al:Cu2O/n-ZnO heterojunction and p-Cu2O/ n-Al:Cu2O homojunction photovoltaic devices were constructed by using sequential electrodeposition. The effects of Al impurity were investigated by examining the structural, optical, and semiconductor characteristics of the Cu2O layer using XRD, FE-SEM, XPS, and UV−vis analyses and electrochemical measurements of Mott−Schottky plots. Photovoltaic characteristics were then assessed through current density−voltage curves under AM 1.5G illumination and external quantum efficiency (EQE) for both Cu2O/ZnO heterojunction and p-Cu2O/n-Al:Cu2O homojunction devices. The introduction of Al impurities induced a change in the semiconductor type from intrinsic p-type Cu2O to n-type and decreased carrier concentration while keeping the characteristic cubic lattice. A slight increase in the band gap energy of the Cu2O layers from 2.00 to 2.08 eV was noted with an increase in Al impurity content. The maximum value of the EQE evaluated for the heterojunction photovoltaic devices composed of Cu2O, Al:Cu2O, and n-ZnO semiconductor layers decreased with an increase in Al impurity content. However, the EQE at wavelengths ranging from approximately 630 to 500 nm was enhanced by Al impurity introduction, although the optical absorption characteristics were almost the same in absorption coefficient and dependence on the wavelength, irrespective of the Al content. The enhancement was attributed to an increase in internal quantum efficiency originating from the accelerating dissociation of excitons to free carrier generation for the yellow and green exciton series due to the introduced Al impurities. An EQE of 28% was achieved in the p-Cu2O/n-Al:Cu2O homojunction photovoltaic device, along with enhancements in the EQE values at wavelengths ranging from 630 to 500 nm, showing that both the p-Cu2O and n-Al:Cu2O layers functioned as photovoltaic layers, as evidenced by their external quantum efficiency feature. ACS publication 2024 Article PeerReviewed text en http://eprints.uthm.edu.my/12388/1/J17849_adbb4f7ff9e514f44ff39a7b76ccf2d1.pdf Hashimoto, Yui and Mohammad Zain, Mohd Zamzuri and Muraoka, Naoki and Inaba, Rieru and Mohamad, Fariza and Khoo, Pei Loon and Izaki, Masanobu (2024) Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices. Applied Energy Materials, 7. pp. 3677-3687. https://doi.org/10.1021/acsaem.4c00019?urlappend=%3Fref%3DPDF&jav=VoR&rel=cite-as
institution Universiti Tun Hussein Onn Malaysia
building UTHM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tun Hussein Onn Malaysia
content_source UTHM Institutional Repository
url_provider http://eprints.uthm.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Hashimoto, Yui
Mohammad Zain, Mohd Zamzuri
Muraoka, Naoki
Inaba, Rieru
Mohamad, Fariza
Khoo, Pei Loon
Izaki, Masanobu
Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
description N-type Al:Cu2O semiconductor layers were prepared via cathodic electrodepositions from a copper(II)-lactate complex aqueous solution with added aluminum chloride. Subsequently, the Al:Cu2O/n-ZnO heterojunction and p-Cu2O/ n-Al:Cu2O homojunction photovoltaic devices were constructed by using sequential electrodeposition. The effects of Al impurity were investigated by examining the structural, optical, and semiconductor characteristics of the Cu2O layer using XRD, FE-SEM, XPS, and UV−vis analyses and electrochemical measurements of Mott−Schottky plots. Photovoltaic characteristics were then assessed through current density−voltage curves under AM 1.5G illumination and external quantum efficiency (EQE) for both Cu2O/ZnO heterojunction and p-Cu2O/n-Al:Cu2O homojunction devices. The introduction of Al impurities induced a change in the semiconductor type from intrinsic p-type Cu2O to n-type and decreased carrier concentration while keeping the characteristic cubic lattice. A slight increase in the band gap energy of the Cu2O layers from 2.00 to 2.08 eV was noted with an increase in Al impurity content. The maximum value of the EQE evaluated for the heterojunction photovoltaic devices composed of Cu2O, Al:Cu2O, and n-ZnO semiconductor layers decreased with an increase in Al impurity content. However, the EQE at wavelengths ranging from approximately 630 to 500 nm was enhanced by Al impurity introduction, although the optical absorption characteristics were almost the same in absorption coefficient and dependence on the wavelength, irrespective of the Al content. The enhancement was attributed to an increase in internal quantum efficiency originating from the accelerating dissociation of excitons to free carrier generation for the yellow and green exciton series due to the introduced Al impurities. An EQE of 28% was achieved in the p-Cu2O/n-Al:Cu2O homojunction photovoltaic device, along with enhancements in the EQE values at wavelengths ranging from 630 to 500 nm, showing that both the p-Cu2O and n-Al:Cu2O layers functioned as photovoltaic layers, as evidenced by their external quantum efficiency feature.
format Article
author Hashimoto, Yui
Mohammad Zain, Mohd Zamzuri
Muraoka, Naoki
Inaba, Rieru
Mohamad, Fariza
Khoo, Pei Loon
Izaki, Masanobu
author_facet Hashimoto, Yui
Mohammad Zain, Mohd Zamzuri
Muraoka, Naoki
Inaba, Rieru
Mohamad, Fariza
Khoo, Pei Loon
Izaki, Masanobu
author_sort Hashimoto, Yui
title Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
title_short Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
title_full Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
title_fullStr Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
title_full_unstemmed Al:Cu2O n‑Type Semiconductors�Electrochemical Fabrication of Heterojunction and Homojunction Photovoltaic Devices
title_sort al:cu2o n‑type semiconductors�electrochemical fabrication of heterojunction and homojunction photovoltaic devices
publisher ACS publication
publishDate 2024
url http://eprints.uthm.edu.my/12388/1/J17849_adbb4f7ff9e514f44ff39a7b76ccf2d1.pdf
http://eprints.uthm.edu.my/12388/
https://doi.org/10.1021/acsaem.4c00019?urlappend=%3Fref%3DPDF&jav=VoR&rel=cite-as
_version_ 1825163108998447104
score 13.244413

Similar Items