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A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications

Magnetite nanoparticles (α-Fe3O4) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated. As the Cu2+ dopant content increased from 5 to 10%, the average crysta...

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Main Authors: Saleem, Shahroz, Jamee, Muhammad Hasnain, A. Alothman, Asma, Mayzan, Mohd Zul Hilmi, Yousa, Talha, Ahmad, Muhammad Rehan, Ali, Asad, Zaman, Abid
Format: Article
Language:English
Published: Springer 2023
Subjects:
QC Physics
Online Access:http://eprints.uthm.edu.my/11773/1/J17308_c847c448b7f5d13ad2b86c77a687b7de.pdf
http://eprints.uthm.edu.my/11773/
https://doi.org/10.1007/s10971-023-06287-4
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spelling my.uthm.eprints.117732025-02-20T01:45:34Z http://eprints.uthm.edu.my/11773/ A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications Saleem, Shahroz Jamee, Muhammad Hasnain A. Alothman, Asma Mayzan, Mohd Zul Hilmi Yousa, Talha Ahmad, Muhammad Rehan Ali, Asad Zaman, Abid QC Physics Magnetite nanoparticles (α-Fe3O4) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated. As the Cu2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76–1.83 eV by enhancing Cu2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10−5 to 9.17 × 10−6 ℧ cm−1 The obtained consequences revealed that desired properties of Cu+2 doped Fe3O4 NPs can be obtained by controlling the substituting content in host material. The Fe3O4 NPs with Cu2+ doping exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photodetector, sensors and energy storage devices. Springer 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/11773/1/J17308_c847c448b7f5d13ad2b86c77a687b7de.pdf Saleem, Shahroz and Jamee, Muhammad Hasnain and A. Alothman, Asma and Mayzan, Mohd Zul Hilmi and Yousa, Talha and Ahmad, Muhammad Rehan and Ali, Asad and Zaman, Abid (2023) A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications. Journal of Sol-Gel Science and Technology. pp. 1-12. https://doi.org/10.1007/s10971-023-06287-4
institution Universiti Tun Hussein Onn Malaysia
building UTHM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tun Hussein Onn Malaysia
content_source UTHM Institutional Repository
url_provider http://eprints.uthm.edu.my/
language English
topic QC Physics
spellingShingle QC Physics
Saleem, Shahroz
Jamee, Muhammad Hasnain
A. Alothman, Asma
Mayzan, Mohd Zul Hilmi
Yousa, Talha
Ahmad, Muhammad Rehan
Ali, Asad
Zaman, Abid
A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
description Magnetite nanoparticles (α-Fe3O4) were successfully prepared by a chemical co-precipitation technique. Modification in electrical properties of α-Fe3O4 by Cu2+ dopant for the modification in electrical properties was deliberated. As the Cu2+ dopant content increased from 5 to 10%, the average crystallite size decreased from 2.96 to 2.93 nm. The synthesized sample doped with 5% exhibited the porous nature and least agglomeration. The optical studies revealed that energy band gap increased from 1.76–1.83 eV by enhancing Cu2+ content from 5 to 10%. The electrical studies revealed that the electrical conductivity decreased from 4.04 × 10−5 to 9.17 × 10−6 ℧ cm−1 The obtained consequences revealed that desired properties of Cu+2 doped Fe3O4 NPs can be obtained by controlling the substituting content in host material. The Fe3O4 NPs with Cu2+ doping exhibited higher electrical conductivity and become an excellent candidate for development of electronic and optoelectronic devices, such as, photodetector, sensors and energy storage devices.
format Article
author Saleem, Shahroz
Jamee, Muhammad Hasnain
A. Alothman, Asma
Mayzan, Mohd Zul Hilmi
Yousa, Talha
Ahmad, Muhammad Rehan
Ali, Asad
Zaman, Abid
author_facet Saleem, Shahroz
Jamee, Muhammad Hasnain
A. Alothman, Asma
Mayzan, Mohd Zul Hilmi
Yousa, Talha
Ahmad, Muhammad Rehan
Ali, Asad
Zaman, Abid
author_sort Saleem, Shahroz
title A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
title_short A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
title_full A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
title_fullStr A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
title_full_unstemmed A band gap engineering for the modification in electrical properties of Fe3O4 by Cu2+ doping for electronic and optoelectronic devices applications
title_sort band gap engineering for the modification in electrical properties of fe3o4 by cu2+ doping for electronic and optoelectronic devices applications
publisher Springer
publishDate 2023
url http://eprints.uthm.edu.my/11773/1/J17308_c847c448b7f5d13ad2b86c77a687b7de.pdf
http://eprints.uthm.edu.my/11773/
https://doi.org/10.1007/s10971-023-06287-4
_version_ 1825163107637395456
score 13.244413

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