Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications

The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To inve...

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Main Authors: Nasir, Syafiqa, Bablu Kumar Ghosh, Bablu Kumar Ghosh, Pratap Kumar Dakua, Pratap Kumar Dakua, Fuei Pien Chee, Fuei Pien Chee, K.A. Mohamad, K.A. Mohamad, Saad, Ismail
Format: Article
Language:English
Published: Elsevier 2024
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Online Access:http://eprints.uthm.edu.my/10898/1/J17331_852854db94b8b42ecdabb24bf88cc59a.pdf
http://eprints.uthm.edu.my/10898/
https://doi.org/10.1016/j.optmat.2023.114768
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spelling my.uthm.eprints.108982024-05-12T03:20:49Z http://eprints.uthm.edu.my/10898/ Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications Nasir, Syafiqa Bablu Kumar Ghosh, Bablu Kumar Ghosh Pratap Kumar Dakua, Pratap Kumar Dakua Fuei Pien Chee, Fuei Pien Chee K.A. Mohamad, K.A. Mohamad Saad, Ismail TA Engineering (General). Civil engineering (General) The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM grain size and XRD analysis. The transmittance of SiGe thin film is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si0.8Ge0.2 is shown better on Quartz substrate whereas the dark analysis PTAA/Si0.9Ge0.1 is realized more favorable on ITO glass substrate. Elsevier 2024 Article PeerReviewed text en http://eprints.uthm.edu.my/10898/1/J17331_852854db94b8b42ecdabb24bf88cc59a.pdf Nasir, Syafiqa and Bablu Kumar Ghosh, Bablu Kumar Ghosh and Pratap Kumar Dakua, Pratap Kumar Dakua and Fuei Pien Chee, Fuei Pien Chee and K.A. Mohamad, K.A. Mohamad and Saad, Ismail (2024) Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications. Optical Materials, 147. pp. 1-8. https://doi.org/10.1016/j.optmat.2023.114768
institution Universiti Tun Hussein Onn Malaysia
building UTHM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tun Hussein Onn Malaysia
content_source UTHM Institutional Repository
url_provider http://eprints.uthm.edu.my/
language English
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Nasir, Syafiqa
Bablu Kumar Ghosh, Bablu Kumar Ghosh
Pratap Kumar Dakua, Pratap Kumar Dakua
Fuei Pien Chee, Fuei Pien Chee
K.A. Mohamad, K.A. Mohamad
Saad, Ismail
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
description The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM grain size and XRD analysis. The transmittance of SiGe thin film is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si0.8Ge0.2 is shown better on Quartz substrate whereas the dark analysis PTAA/Si0.9Ge0.1 is realized more favorable on ITO glass substrate.
format Article
author Nasir, Syafiqa
Bablu Kumar Ghosh, Bablu Kumar Ghosh
Pratap Kumar Dakua, Pratap Kumar Dakua
Fuei Pien Chee, Fuei Pien Chee
K.A. Mohamad, K.A. Mohamad
Saad, Ismail
author_facet Nasir, Syafiqa
Bablu Kumar Ghosh, Bablu Kumar Ghosh
Pratap Kumar Dakua, Pratap Kumar Dakua
Fuei Pien Chee, Fuei Pien Chee
K.A. Mohamad, K.A. Mohamad
Saad, Ismail
author_sort Nasir, Syafiqa
title Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
title_short Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
title_full Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
title_fullStr Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
title_full_unstemmed Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
title_sort organic-inorganic ptaa-sige transparent optical materials performancem analysis for photo device applications
publisher Elsevier
publishDate 2024
url http://eprints.uthm.edu.my/10898/1/J17331_852854db94b8b42ecdabb24bf88cc59a.pdf
http://eprints.uthm.edu.my/10898/
https://doi.org/10.1016/j.optmat.2023.114768
_version_ 1800094621984882688
score 13.211869