Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications
The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To inve...
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my.uthm.eprints.108982024-05-12T03:20:49Z http://eprints.uthm.edu.my/10898/ Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications Nasir, Syafiqa Bablu Kumar Ghosh, Bablu Kumar Ghosh Pratap Kumar Dakua, Pratap Kumar Dakua Fuei Pien Chee, Fuei Pien Chee K.A. Mohamad, K.A. Mohamad Saad, Ismail TA Engineering (General). Civil engineering (General) The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM grain size and XRD analysis. The transmittance of SiGe thin film is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si0.8Ge0.2 is shown better on Quartz substrate whereas the dark analysis PTAA/Si0.9Ge0.1 is realized more favorable on ITO glass substrate. Elsevier 2024 Article PeerReviewed text en http://eprints.uthm.edu.my/10898/1/J17331_852854db94b8b42ecdabb24bf88cc59a.pdf Nasir, Syafiqa and Bablu Kumar Ghosh, Bablu Kumar Ghosh and Pratap Kumar Dakua, Pratap Kumar Dakua and Fuei Pien Chee, Fuei Pien Chee and K.A. Mohamad, K.A. Mohamad and Saad, Ismail (2024) Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications. Optical Materials, 147. pp. 1-8. https://doi.org/10.1016/j.optmat.2023.114768 |
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TA Engineering (General). Civil engineering (General) Nasir, Syafiqa Bablu Kumar Ghosh, Bablu Kumar Ghosh Pratap Kumar Dakua, Pratap Kumar Dakua Fuei Pien Chee, Fuei Pien Chee K.A. Mohamad, K.A. Mohamad Saad, Ismail Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
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The SiGe materials has currently received a lot of interest due to its application for the advancement of optoelectronics and related sensor technologies. Its promising stability, and band gap-dependent performance for both bulk and nano-crystalline properties are vital as optical materials. To investigate the electrical performance of SiGe active materials based photo device, the spin coated organic p-materials contact is developed on sputtered SiGe on Quartz and ITO glass substrates. Both Si0.8Ge0.2 and Si0.9Ge0.1 films greater than 85 % visible band transparency are predicted that the deposited SiGe is nano-crystalline nature. It is also revealed from absorption-based band gap, AFM grain size and XRD analysis. The transmittance of SiGe thin film is increased with the microstrain of the films as a result, better opto-electrical performance is displayed. Ge composition though slightly makes variation of lattice constant and strain effect however, relatively lower transmittance films greater current density is exhibited. A higher rectifying ratio for lower transparent SiGe material deposited on ITO glass substrate is shown in the dark. Transparency and optoelectrical performance viewpoint white light illuminated PTAA/Si0.8Ge0.2 is shown better on Quartz substrate whereas the dark analysis PTAA/Si0.9Ge0.1 is realized more favorable on ITO glass substrate. |
format |
Article |
author |
Nasir, Syafiqa Bablu Kumar Ghosh, Bablu Kumar Ghosh Pratap Kumar Dakua, Pratap Kumar Dakua Fuei Pien Chee, Fuei Pien Chee K.A. Mohamad, K.A. Mohamad Saad, Ismail |
author_facet |
Nasir, Syafiqa Bablu Kumar Ghosh, Bablu Kumar Ghosh Pratap Kumar Dakua, Pratap Kumar Dakua Fuei Pien Chee, Fuei Pien Chee K.A. Mohamad, K.A. Mohamad Saad, Ismail |
author_sort |
Nasir, Syafiqa |
title |
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
title_short |
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
title_full |
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
title_fullStr |
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
title_full_unstemmed |
Organic-inorganic PTAA-SiGe transparent optical materials performancem analysis for photo device applications |
title_sort |
organic-inorganic ptaa-sige transparent optical materials performancem analysis for photo device applications |
publisher |
Elsevier |
publishDate |
2024 |
url |
http://eprints.uthm.edu.my/10898/1/J17331_852854db94b8b42ecdabb24bf88cc59a.pdf http://eprints.uthm.edu.my/10898/ https://doi.org/10.1016/j.optmat.2023.114768 |
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1800094621984882688 |
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13.211869 |