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Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin...

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Main Authors: Mohamad Arifin, Nurliyana, Mohamad, Fariza, Hussin, Rosniza, Mohd Ismail, Anis Zafirah, Ahmad Ramli, Shazleen, Ahmad, Norazlina, Muhd Nor, Nik Hisyamudin, Sahdan, Mohd Zainizan, Mohammad Zain, Mohd Zamzuri, Masanobu Izaki, Masanobu Izaki
Format: Article
Language:English
Published: Mdpi 2023
Subjects:
T Technology (General)
Online Access:http://eprints.uthm.edu.my/10732/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf
http://eprints.uthm.edu.my/10732/
https://doi.org/10.3390/coatings13010206
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spelling my.uthm.eprints.107322024-01-17T01:50:39Z http://eprints.uthm.edu.my/10732/ Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film Mohamad Arifin, Nurliyana Mohamad, Fariza Hussin, Rosniza Mohd Ismail, Anis Zafirah Ahmad Ramli, Shazleen Ahmad, Norazlina Muhd Nor, Nik Hisyamudin Sahdan, Mohd Zainizan Mohammad Zain, Mohd Zamzuri Masanobu Izaki, Masanobu Izaki T Technology (General) Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 ◦C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively Mdpi 2023 Article PeerReviewed text en http://eprints.uthm.edu.my/10732/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf Mohamad Arifin, Nurliyana and Mohamad, Fariza and Hussin, Rosniza and Mohd Ismail, Anis Zafirah and Ahmad Ramli, Shazleen and Ahmad, Norazlina and Muhd Nor, Nik Hisyamudin and Sahdan, Mohd Zainizan and Mohammad Zain, Mohd Zamzuri and Masanobu Izaki, Masanobu Izaki (2023) Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film. Coatings, 13 (296). pp. 1-13. https://doi.org/10.3390/coatings13010206
institution Universiti Tun Hussein Onn Malaysia
building UTHM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Tun Hussein Onn Malaysia
content_source UTHM Institutional Repository
url_provider http://eprints.uthm.edu.my/
language English
topic T Technology (General)
spellingShingle T Technology (General)
Mohamad Arifin, Nurliyana
Mohamad, Fariza
Hussin, Rosniza
Mohd Ismail, Anis Zafirah
Ahmad Ramli, Shazleen
Ahmad, Norazlina
Muhd Nor, Nik Hisyamudin
Sahdan, Mohd Zainizan
Mohammad Zain, Mohd Zamzuri
Masanobu Izaki, Masanobu Izaki
Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
description Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 ◦C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively
format Article
author Mohamad Arifin, Nurliyana
Mohamad, Fariza
Hussin, Rosniza
Mohd Ismail, Anis Zafirah
Ahmad Ramli, Shazleen
Ahmad, Norazlina
Muhd Nor, Nik Hisyamudin
Sahdan, Mohd Zainizan
Mohammad Zain, Mohd Zamzuri
Masanobu Izaki, Masanobu Izaki
author_facet Mohamad Arifin, Nurliyana
Mohamad, Fariza
Hussin, Rosniza
Mohd Ismail, Anis Zafirah
Ahmad Ramli, Shazleen
Ahmad, Norazlina
Muhd Nor, Nik Hisyamudin
Sahdan, Mohd Zainizan
Mohammad Zain, Mohd Zamzuri
Masanobu Izaki, Masanobu Izaki
author_sort Mohamad Arifin, Nurliyana
title Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
title_short Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
title_full Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
title_fullStr Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
title_full_unstemmed Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film
title_sort annealing treatment on homogenous n-tio2/zno bilayer thin film deposition as window layer for p-cu2o-based heterostructure thin film
publisher Mdpi
publishDate 2023
url http://eprints.uthm.edu.my/10732/1/J15734_07a7337393f7392db3ebeb41a54547f4.pdf
http://eprints.uthm.edu.my/10732/
https://doi.org/10.3390/coatings13010206
_version_ 1789427615415664640
score 13.211869

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