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Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells

Thin films of molybdenum chalcogenides (MoX2, X=S, Se and Te) have been electrosynthesized on indium-tin-oxide; (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting par...

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Main Authors: T., Joseph Sahaya Anand, S., Shariza, Lim, Mei Ying
Format: Conference or Workshop Item
Language:English
Published: 2012
Subjects:
TJ Mechanical engineering and machinery
Online Access:http://eprints.utem.edu.my/id/eprint/9165/1/UTeM_Anand.pdf
http://eprints.utem.edu.my/id/eprint/9165/
http://www.mmu.edu.my/
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spelling my.utem.eprints.91652015-05-28T04:01:58Z http://eprints.utem.edu.my/id/eprint/9165/ Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells T., Joseph Sahaya Anand S., Shariza Lim, Mei Ying TJ Mechanical engineering and machinery Thin films of molybdenum chalcogenides (MoX2, X=S, Se and Te) have been electrosynthesized on indium-tin-oxide; (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analyzed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S, Se and Te elements in the film stoichiometry. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter value falls in the range of many other transition metal chalcogenides and this has proven that MoX2 thin films is capable as a solar / PEC cell material 2012-04-09 Conference or Workshop Item NonPeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/9165/1/UTeM_Anand.pdf T., Joseph Sahaya Anand and S., Shariza and Lim, Mei Ying (2012) Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells. In: 3rd Infineon-MMU Technical Symposium, 9 April 2012, Multimedia University, Melaka. http://www.mmu.edu.my/
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TJ Mechanical engineering and machinery
spellingShingle TJ Mechanical engineering and machinery
T., Joseph Sahaya Anand
S., Shariza
Lim, Mei Ying
Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
description Thin films of molybdenum chalcogenides (MoX2, X=S, Se and Te) have been electrosynthesized on indium-tin-oxide; (ITO)-coated glass and stainless steel substrates. The films were characterized for their structural, morphological and compositional characteristics. Their optical and semiconducting parameters were also analyzed in order to determine the suitability of the thin films for photoelectrochemical (PEC) / solar cell applications. Structural analysis via X-ray diffraction (XRD) reveals that the films are polycrystalline in nature. Scanning electron microscope (SEM) studies reveals the films were adherent to the substrate. Compositional analysis via energy dispersive X-ray (EDX) technique confirms the presence of Mo, S, Se and Te elements in the film stoichiometry. The optical studies show that the films are of direct bandgap. Results on the semiconductor parameters analysis of the films showed that the nature of the Mott-Schottky plots indicates that the films obtained are of n-type material. For all films, the semiconductor parameter value falls in the range of many other transition metal chalcogenides and this has proven that MoX2 thin films is capable as a solar / PEC cell material
format Conference or Workshop Item
author T., Joseph Sahaya Anand
S., Shariza
Lim, Mei Ying
author_facet T., Joseph Sahaya Anand
S., Shariza
Lim, Mei Ying
author_sort T., Joseph Sahaya Anand
title Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
title_short Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
title_full Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
title_fullStr Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
title_full_unstemmed Transition Metal Chalcogenide Thin Films for Photoelectrochemical / Solar Cells
title_sort transition metal chalcogenide thin films for photoelectrochemical / solar cells
publishDate 2012
url http://eprints.utem.edu.my/id/eprint/9165/1/UTeM_Anand.pdf
http://eprints.utem.edu.my/id/eprint/9165/
http://www.mmu.edu.my/
_version_ 1665905389634322432
score 13.211869

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