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Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method

This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (RS) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain...

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Main Author: Fauziyah, Salehuddin
Format: Article
Language:English
Published: Asian Network for Scientific Information 2011
Subjects:
TA Engineering (General). Civil engineering (General)
Online Access:http://eprints.utem.edu.my/id/eprint/3788/1/%28J3%29_JAP_11%287%29_1261-1266.pdf
http://eprints.utem.edu.my/id/eprint/3788/
http://scialert.net/jindex.php?issn=1812-5654
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spelling my.utem.eprints.37882021-11-25T11:52:28Z http://eprints.utem.edu.my/id/eprint/3788/ Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method Fauziyah, Salehuddin TA Engineering (General). Civil engineering (General) This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (RS) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain Implantation, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the poly sheet resistance and leakage current were determined by using Analysis of Variance (ANOVA). Virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. The optimum process parameter combination was obtained by using the analysis of Signal-to-Noise (S/N) ratio. The confirmation tests indicated that it is possible to decrease the poly sheet resistance and leakage current significantly by using the Taguchi method. The results show that the RS and ILeak after optimizations approaches are 67.53 Ω sq-1 and 0.1850 m A μm-1, respectively. In this study, S/D implantation was identified as one of the process parameters that has the strongest effect on the response characteristics. Asian Network for Scientific Information 2011-03-09 Article PeerReviewed text en http://eprints.utem.edu.my/id/eprint/3788/1/%28J3%29_JAP_11%287%29_1261-1266.pdf Fauziyah, Salehuddin (2011) Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method. Journal of Applied Sciences, 11 (7). pp. 1261-1266. ISSN 1812-5654 http://scialert.net/jindex.php?issn=1812-5654 10.3923/jas.2011.1261.1266
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TA Engineering (General). Civil engineering (General)
spellingShingle TA Engineering (General). Civil engineering (General)
Fauziyah, Salehuddin
Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
description This study reports on an investigation of the effect and optimization of process parameter variability on poly sheet resistance (RS) and leakage current (ILeak) in 45 nm PMOS device. The experimental studies were conducted under varying four process parameters, namely Halo implantation, Source/Drain Implantation, Oxide Growth Temperature and Silicide Anneal Temperature. Taguchi Method was used to determine the settings of process parameters. The level of importance of the process parameters on the poly sheet resistance and leakage current were determined by using Analysis of Variance (ANOVA). Virtual fabrication of the devices was performed by using ATHENA module. While the electrical characterization of the devices was implemented by using ATLAS module. The optimum process parameter combination was obtained by using the analysis of Signal-to-Noise (S/N) ratio. The confirmation tests indicated that it is possible to decrease the poly sheet resistance and leakage current significantly by using the Taguchi method. The results show that the RS and ILeak after optimizations approaches are 67.53 Ω sq-1 and 0.1850 m A μm-1, respectively. In this study, S/D implantation was identified as one of the process parameters that has the strongest effect on the response characteristics.
format Article
author Fauziyah, Salehuddin
author_facet Fauziyah, Salehuddin
author_sort Fauziyah, Salehuddin
title Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
title_short Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
title_full Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
title_fullStr Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
title_full_unstemmed Optimization of Process Parameter Variability in 45 nm PMOS Device using Taguchi Method
title_sort optimization of process parameter variability in 45 nm pmos device using taguchi method
publisher Asian Network for Scientific Information
publishDate 2011
url http://eprints.utem.edu.my/id/eprint/3788/1/%28J3%29_JAP_11%287%29_1261-1266.pdf
http://eprints.utem.edu.my/id/eprint/3788/
http://scialert.net/jindex.php?issn=1812-5654
_version_ 1718929941047803904
score 13.211869

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