Determination of electrical measurement to detect poor thermal dissipation devices using TRIZ
Thermal dissipation of a microelectronic device is a topic of interest amongst the researchers because poor thermal dissipation may cause reliability problem during customer’s application. Researchers found that Leadframe, Solder Paste Material, Chip Metalization and Die Attach process contributed t...
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| Format: | Thesis |
| Language: | English English |
| Published: |
2017
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| Online Access: | http://eprints.utem.edu.my/id/eprint/20621/1/Determination%20Of%20Electrical%20Measurement%20To%20Detect%20Poor%20Thermal%20Dissipation%20Devices%20Using%20TRIZ.pdf http://eprints.utem.edu.my/id/eprint/20621/2/Determination%20of%20electrical%20measurement%20to%20detect%20poor%20thermal%20dissipation%20devices%20using%20TRIZ.pdf http://eprints.utem.edu.my/id/eprint/20621/ https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=104240 |
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| Summary: | Thermal dissipation of a microelectronic device is a topic of interest amongst the researchers because poor thermal dissipation may cause reliability problem during customer’s application. Researchers found that Leadframe, Solder Paste Material, Chip Metalization and Die Attach process contributed to poor thermal dissipation of a device. The existence of air gap inside the package which was created during Die Attach process was found causing poor thermal dissipation for the device. Air gap blocks the heat dissipation path of the device, causing the heat to be entrapped inside the device which leads to poor reliability performance. X-Ray and Scanning Acoustic Microscopy (SAM) are widely used to identify air gap within microelectronic devices. However, these methods are only able to identify the poor thermal dissipation devices if it is related to the presence of air gap. Poor thermal dissipation can also caused by some weaknesses inherited from wafer processes. An alternative way to identify poor thermal dissipation devices is by using electrical measurement which has better advantages compared to X-Ray and SAM in terms of sampling size, time and effort. However, the challenge is on the effectiveness of the electrical measurement to identify poor thermal dissipation device because using low energy, the measurement may not be sensitive enough; but if using high energy, the device may become destructive. This is a typical contradiction found in this Inventive Problem which best solved by using “The Theory of Inventive Problem”-TRIZ because TRIZ deals with “Contradiction”. Moreover, TRIZ stimulated new idea in solving the effectiveness problem in a structured approach. In this thesis, TRIZ proposed to use Parameter Change (PC) and Periodic Action (PA) as the solutions principle to increase the effectiveness of identifying poor thermal dissipation devices. Principle PC concluded that using V voltage, Y timing with 13.2Ampere as the input energy able to screen out device with poor thermal dissipation with 100% success rate; while Principle PA suggested that using input Energy of 900mJ able to achieve the same result. Experiment and data collection confirmed that TRIZ principle PC and PA are able to identify poor thermal dissipation in microelectronic device even though the device did not have air gaps. Such identification was not possible through traditional approaches, such as X-Ray or SAM. |
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