Characterisation Of Sheet Resistivity And Contact Resistivity For Source/Drain Of N-Mosfet Device
In this study, the sheet resistivity (ps) of the thin film phosphorus ion source/drain implantation regions, and the specific interfacial contact resistivity (pc) between the thin film aluminium 1% silicon electrode layer and the thin film phosphorus ion source/drain implantation regions of the n-ch...
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| Format: | Article |
| Language: | English |
| Published: |
Penerbit Universiti, UTeM
2014
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/16843/2/JTEC2014.pdf http://eprints.utem.edu.my/id/eprint/16843/ http://journal.utem.edu.my/index.php/jtec/article/view/464 |
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