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Design consideration of N-drift region doping concentration in high voltage VDMOS transistor

N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device...

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Main Authors: Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof, Wijaya Bayu Murti, Wijaya Bayu Murti, Norhayati binti Soin, N.Soin
Format: Article
Language:English
Published: 2014
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf
http://eprints.utem.edu.my/id/eprint/14005/
http://www.ijsret.org/
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spelling my.utem.eprints.140052015-05-28T04:35:32Z http://eprints.utem.edu.my/id/eprint/14005/ Design consideration of N-drift region doping concentration in high voltage VDMOS transistor Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof Wijaya Bayu Murti, Wijaya Bayu Murti Norhayati binti Soin, N.Soin TK Electrical engineering. Electronics Nuclear engineering N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance. 2014-07 Article NonPeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof and Wijaya Bayu Murti, Wijaya Bayu Murti and Norhayati binti Soin, N.Soin (2014) Design consideration of N-drift region doping concentration in high voltage VDMOS transistor. International Journal of Scientific Research Engineering & Technology (IJSRET), 3 (4). pp. 764-766. ISSN 2278-0882 http://www.ijsret.org/
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof
Wijaya Bayu Murti, Wijaya Bayu Murti
Norhayati binti Soin, N.Soin
Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
description N-drift doping concentration has important contribution in determining the breakdown voltage and on-resistance of the device. It should be well considered because higher N- drift doping concentration can minimize the on-resistance of the device, but also lowering breakdown voltage of the device that expected to be high. It also has a proportional relationship with threshold voltage degradation caused by hot carrier injection. So the variation of N-drift doping concentration can be used to optimize the VDMOS transistor performance.
format Article
author Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof
Wijaya Bayu Murti, Wijaya Bayu Murti
Norhayati binti Soin, N.Soin
author_facet Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof
Wijaya Bayu Murti, Wijaya Bayu Murti
Norhayati binti Soin, N.Soin
author_sort Haziezol Helmi bin Mohd Yusof, H.H.M.Yusof
title Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_short Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_full Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_fullStr Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_full_unstemmed Design consideration of N-drift region doping concentration in high voltage VDMOS transistor
title_sort design consideration of n-drift region doping concentration in high voltage vdmos transistor
publishDate 2014
url http://eprints.utem.edu.my/id/eprint/14005/1/Design_Consideration_of_N-Drift_Region_Doping_Concentration_in_High_Voltage_VDMOS_Transistor.pdf
http://eprints.utem.edu.my/id/eprint/14005/
http://www.ijsret.org/
_version_ 1665905569867759616
score 13.211869

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