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Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator

Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concent...

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Main Authors: Haroon, Hazura, Hanim, Abdul Razak, Bidin, Mardiana, Shaari, Sahbudin, Menon, P.Sushita
Format: Conference or Workshop Item
Language:English
Published: 2011
Subjects:
TK Electrical engineering. Electronics Nuclear engineering
Online Access:http://eprints.utem.edu.my/id/eprint/13065/1/EScinano_ura.pdf
http://eprints.utem.edu.my/id/eprint/13065/
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spelling my.utem.eprints.130652023-08-01T15:17:47Z http://eprints.utem.edu.my/id/eprint/13065/ Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator Haroon, Hazura Hanim, Abdul Razak Bidin, Mardiana Shaari, Sahbudin Menon, P.Sushita TK Electrical engineering. Electronics Nuclear engineering Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode. The paper reports on the free carrier absorption (FCA) loss associated with p-i-n silicon-oninsulator (SOl) phase modulator at J... = 1.55 Ilm. The analyses include the effect of various doping concentration and injected free carrier concentration on the FCA. The simulations are realized utilizing the 2-D semiconductor simulation package SIL V ACO. 2011 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.utem.edu.my/id/eprint/13065/1/EScinano_ura.pdf Haroon, Hazura and Hanim, Abdul Razak and Bidin, Mardiana and Shaari, Sahbudin and Menon, P.Sushita (2011) Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator. In: ENABLING SCIENCE AND NANOTECHNOLOGY. INTERNATIONAL CONFERENCE. 2010., 1-3 Disember 2010, Kuala Lumpur.
institution Universiti Teknikal Malaysia Melaka
building UTEM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Teknikal Malaysia Melaka
content_source UTEM Institutional Repository
url_provider http://eprints.utem.edu.my/
language English
topic TK Electrical engineering. Electronics Nuclear engineering
spellingShingle TK Electrical engineering. Electronics Nuclear engineering
Haroon, Hazura
Hanim, Abdul Razak
Bidin, Mardiana
Shaari, Sahbudin
Menon, P.Sushita
Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
description Silicon high-speed waveguide-integrated electro-optic modulator is one of the critical devices for on-chip optical networks. The device converts data from electrical domain to the optical domain. Most studies for high speed modulation method in Si or Si based device are based on free carrier concentration variations (injection or depletion of free carriers) which are responsible for local refractive index variations and then phase modulation of a guided wave traveling through the active region. A change in the refractive index/absorption can be achieved by injection or depletion of both electron and holes into the intrinsic region of a silicon p-i-n diode. The paper reports on the free carrier absorption (FCA) loss associated with p-i-n silicon-oninsulator (SOl) phase modulator at J... = 1.55 Ilm. The analyses include the effect of various doping concentration and injected free carrier concentration on the FCA. The simulations are realized utilizing the 2-D semiconductor simulation package SIL V ACO.
format Conference or Workshop Item
author Haroon, Hazura
Hanim, Abdul Razak
Bidin, Mardiana
Shaari, Sahbudin
Menon, P.Sushita
author_facet Haroon, Hazura
Hanim, Abdul Razak
Bidin, Mardiana
Shaari, Sahbudin
Menon, P.Sushita
author_sort Haroon, Hazura
title Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
title_short Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
title_full Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
title_fullStr Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
title_full_unstemmed Free carrier absorption loss of p-i-n Silicon-On-Insulator (SOl) phase modulator
title_sort free carrier absorption loss of p-i-n silicon-on-insulator (sol) phase modulator
publishDate 2011
url http://eprints.utem.edu.my/id/eprint/13065/1/EScinano_ura.pdf
http://eprints.utem.edu.my/id/eprint/13065/
_version_ 1773547661524205568
score 13.211869

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