Synthesis Of Polycrystalline Silicon Carbide Using Aluminum Carbide And Calcium Carbide With Silicon Tetrachloride
In this research, the synthesis of high purity polycrystalline silicon carbide (SiC) at low temperatures of 400, 500 and 600 °C was investigated, and its efficiency in formation of SiC used in radiation dosimetry system which is main concerns nowadays and was investigated. The synthesis of SiC was i...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2018
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| Online Access: | http://eprints.usm.my/53267/1/Synthesis%20Of%20Polycrystalline%20Silicon%20Carbide%20Using%20Aluminum%20Carbide%20And%20Calcium%20Carbide%20With%20Silicon%20Tetrachloride_Muhammad%20Hakimi%20Ruzlan_B1_2018.pdf http://eprints.usm.my/53267/ |
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