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Modelling Of Advanced Iii-V Compound Semiconductor Devices

Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by various researchers. The increasing in number of studying about RTD is because of increased demand and the need to resonant tunneling diodes that have the ability to bear the frequency of terahertz. The...

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Main Author: Rozik, Nik Nor Amirah
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2017
Subjects:
T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
Online Access:http://eprints.usm.my/53062/1/Modelling%20Of%20Advanced%20Iii-V%20Compound%20Semiconductor%20Devices_Nik%20Nor%20Amirah%20Rozik_E3_2017.pdf
http://eprints.usm.my/53062/
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spelling my.usm.eprints.53062 http://eprints.usm.my/53062/ Modelling Of Advanced Iii-V Compound Semiconductor Devices Rozik, Nik Nor Amirah T Technology TK Electrical Engineering. Electronics. Nuclear Engineering Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by various researchers. The increasing in number of studying about RTD is because of increased demand and the need to resonant tunneling diodes that have the ability to bear the frequency of terahertz. The very high switching speeds frequency of the resonant tunneling diode has enabled the creation of a wide range of applications in the communication system and the imaging system for low-visibility environment. Resonant tunneling diodes using quantum mechanical works to produce a negative differential resistance (NDR). The function of this project is to understand the mechanism that allows RTD operates in quantum mechanical. In addition, the relationship of physical parameters and RTD I-V characteristics were also studied for a better understanding about the properties of RTD. The characteristics of I-V curves are also investigated and the effect of changes in the physical parameters of the RTD to the I-V graph is study in more details. Silvaco simulation software is used to carry out the studies on two model namely XMBE66 and XMBE230 RTD. A simulation tool based on Green function (Non-Equilibrium Green Function, NEGF) which use effective mass approach has been employed in this quantum transport simulation. This simulation model was also run with different layers epitaxial RTD to investigate the effects of the changes on the characteristics IV. Finally, both of the simulation and measured result of I-V graph were compared to get the best fit by varying the epilayer. Universiti Sains Malaysia 2017-06-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/53062/1/Modelling%20Of%20Advanced%20Iii-V%20Compound%20Semiconductor%20Devices_Nik%20Nor%20Amirah%20Rozik_E3_2017.pdf Rozik, Nik Nor Amirah (2017) Modelling Of Advanced Iii-V Compound Semiconductor Devices. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik & Elektronik. (Submitted)
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
spellingShingle T Technology
TK Electrical Engineering. Electronics. Nuclear Engineering
Rozik, Nik Nor Amirah
Modelling Of Advanced Iii-V Compound Semiconductor Devices
description Resonant tunneling diode (RTD) is a type of electronic device that has been reviewed regularly by various researchers. The increasing in number of studying about RTD is because of increased demand and the need to resonant tunneling diodes that have the ability to bear the frequency of terahertz. The very high switching speeds frequency of the resonant tunneling diode has enabled the creation of a wide range of applications in the communication system and the imaging system for low-visibility environment. Resonant tunneling diodes using quantum mechanical works to produce a negative differential resistance (NDR). The function of this project is to understand the mechanism that allows RTD operates in quantum mechanical. In addition, the relationship of physical parameters and RTD I-V characteristics were also studied for a better understanding about the properties of RTD. The characteristics of I-V curves are also investigated and the effect of changes in the physical parameters of the RTD to the I-V graph is study in more details. Silvaco simulation software is used to carry out the studies on two model namely XMBE66 and XMBE230 RTD. A simulation tool based on Green function (Non-Equilibrium Green Function, NEGF) which use effective mass approach has been employed in this quantum transport simulation. This simulation model was also run with different layers epitaxial RTD to investigate the effects of the changes on the characteristics IV. Finally, both of the simulation and measured result of I-V graph were compared to get the best fit by varying the epilayer.
format Monograph
author Rozik, Nik Nor Amirah
author_facet Rozik, Nik Nor Amirah
author_sort Rozik, Nik Nor Amirah
title Modelling Of Advanced Iii-V Compound Semiconductor Devices
title_short Modelling Of Advanced Iii-V Compound Semiconductor Devices
title_full Modelling Of Advanced Iii-V Compound Semiconductor Devices
title_fullStr Modelling Of Advanced Iii-V Compound Semiconductor Devices
title_full_unstemmed Modelling Of Advanced Iii-V Compound Semiconductor Devices
title_sort modelling of advanced iii-v compound semiconductor devices
publisher Universiti Sains Malaysia
publishDate 2017
url http://eprints.usm.my/53062/1/Modelling%20Of%20Advanced%20Iii-V%20Compound%20Semiconductor%20Devices_Nik%20Nor%20Amirah%20Rozik_E3_2017.pdf
http://eprints.usm.my/53062/
_version_ 1736834797801570304
score 13.211869

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