Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell

Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotexture...

Full description

Saved in:
Bibliographic Details
Main Author: Noor, Nur Afidah Md.
Format: Thesis
Language:English
Published: 2021
Subjects:
Online Access:http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf
http://eprints.usm.my/52214/
Tags: Add Tag
No Tags, Be the first to tag this record!
id my.usm.eprints.52214
record_format eprints
spelling my.usm.eprints.52214 http://eprints.usm.my/52214/ Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell Noor, Nur Afidah Md. QC1 Physics (General) Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotextured c-Si, has a huge potential for applications in solar cell due to its superior broadband light absorption within 300-1100 nm wavelength region. In this work, two-step metal-assisted chemical etching (MACE) is used to synthesize b-Si by combining low-annealing temperature of silver (Ag) film and short duration of etching of the c-Si wafer. For the b-Si fabrication, p-type (100) c-Si wafers are deposited with 15 nm Ag film using radio frequency (RF) sputtering process. Subsequently, the Ag film is annealed at low temperatures (200-230ᵒC) for 40 min in nitrogen (N2) ambient, producing Ag nanoparticles (NPs). Then, the c-Si wafers with the Ag NPs are etched in a solution containing hydrofluoric acid:hydrogen peroxide:deionized water (HF:H2O2:DI H2O) for a short duration (35-180 s). Effects of etching time, etchant volume ratio and annealing temperature towards surface morphological and optical properties by using atomic force microscope (AFM), field emission scanning electron microscope (FESEM) and UV-Vis-NIR (within 300-1100 nm wavelength region) of b-Si are then investigated. From the investigation, the b-Si with the lowest broadband reflection is produced by annealing at 230ᵒC for 40 min and etched for 70 s using HF:H2O2:DI H2O (1:5:10 by volume). 2021-03 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf Noor, Nur Afidah Md. (2021) Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell. Masters thesis, Perpustakaan Hamzah Sendut.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1 Physics (General)
spellingShingle QC1 Physics (General)
Noor, Nur Afidah Md.
Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
description Crystalline silicon (c-Si) suffers from poor light absorption due to its indirect band gap and high reflection from its surface (about 35% in the visible region). This problem can be solved by texturing the surface of c-Si wafer to reduce its broadband reflection. Black silicon (b-Si) or nanotextured c-Si, has a huge potential for applications in solar cell due to its superior broadband light absorption within 300-1100 nm wavelength region. In this work, two-step metal-assisted chemical etching (MACE) is used to synthesize b-Si by combining low-annealing temperature of silver (Ag) film and short duration of etching of the c-Si wafer. For the b-Si fabrication, p-type (100) c-Si wafers are deposited with 15 nm Ag film using radio frequency (RF) sputtering process. Subsequently, the Ag film is annealed at low temperatures (200-230ᵒC) for 40 min in nitrogen (N2) ambient, producing Ag nanoparticles (NPs). Then, the c-Si wafers with the Ag NPs are etched in a solution containing hydrofluoric acid:hydrogen peroxide:deionized water (HF:H2O2:DI H2O) for a short duration (35-180 s). Effects of etching time, etchant volume ratio and annealing temperature towards surface morphological and optical properties by using atomic force microscope (AFM), field emission scanning electron microscope (FESEM) and UV-Vis-NIR (within 300-1100 nm wavelength region) of b-Si are then investigated. From the investigation, the b-Si with the lowest broadband reflection is produced by annealing at 230ᵒC for 40 min and etched for 70 s using HF:H2O2:DI H2O (1:5:10 by volume).
format Thesis
author Noor, Nur Afidah Md.
author_facet Noor, Nur Afidah Md.
author_sort Noor, Nur Afidah Md.
title Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_short Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_full Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_fullStr Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_full_unstemmed Synthesis And Characterization Of Black Silicon By Silver-Assisted Chemical Etching For Solar Cell
title_sort synthesis and characterization of black silicon by silver-assisted chemical etching for solar cell
publishDate 2021
url http://eprints.usm.my/52214/1/NUR%20AFIDAH%20BINTI%20MD.%20NOOR.pdf
http://eprints.usm.my/52214/
_version_ 1729703931218493440
score 13.211869