Comparative Studies Between Porous Silicon And Porous P-Type Gallium Nitride Prepared Using Alternating Current Photo-Assisted Electrochemical Etching Technique
Porous n-type Si and porous p-type GaN nanostructures were fabricated using alternating current photo-assisted electrochemical (ACPEC) etching in 1:4 volume ratio of hydrofluoric acid (HF) and ethanol (C2H5OH) for a duration of 30 minutes. The aim of this work is to study pore formation on the Si an...
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| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48904/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2098.pdf http://eprints.usm.my/48904/ |
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